Micromagnetic simulation for high field sensors with perpendicular magnetizations
Jin Wei(金伟)a)b) and Liu Yao-Wen(刘要稳)a)†
a Department of Physics, Tongji University, Shanghai {rm 200092, China; b College of Physics and Communication Electronics, Anhui Normal University, Wuhu 241000, China
Abstract In this paper, we present a micromagnetic design for high field sensors. The hard layer of the sensors is L1$_{0}$--FePt which is magnetized perpendicularly to film plane and the sense layer is NiFe which is magnetized in the film plane. The magnetization configurations of the hard and sense layers at different external magnetic fields have been simulated. In micromagnetic simulation, the sense field up to one tesla can be reached by using this sensor. We find that whether the sensor has a symmetric or an asymmetric field-sensing window is determined by the coercive field of the hard layer and the demagnetizing field of the sense layer.
Received: 23 September 2006
Revised: 28 November 2006
Accepted manuscript online:
(Magnetic field sensors using spin polarized transport)
Fund: Project supported by the Nature
Science Foundation of China (Grant No~10404019) and by the Science
and Technology Committee of Shanghai (Grant No~05PJ14090).
Cite this article:
Jin Wei(金伟) and Liu Yao-Wen(刘要稳) Micromagnetic simulation for high field sensors with perpendicular magnetizations 2007 Chinese Physics 16 1731
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