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Chin. Phys. B, 2017, Vol. 26(2): 028101    DOI: 10.1088/1674-1056/26/2/028101
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Photoconductive multi-layer graphene photodetectors fabricated on etched silicon-on-insulator substrates

Yu-Bing Wang(王玉冰), Wei-Hong Yin(尹伟红), Qin Han(韩勤), Xiao-Hong Yang(杨晓红), Han Ye(叶焓), Qian-Qian Lv(吕倩倩), Dong-Dong Yin(尹冬冬)
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract  Recently, graphene-based photodetectors have been rapidly developed. However, their photoresponsivities are generally low due to the weak optical absorption strength of graphene. In this paper, we fabricate photoconductive multi-layer graphene (MLG) photodetectors on etched silicon-on-insulator substrates. A photoresponsivity exceeding 200 A·W-1 is obtained, which enables most optoelectronic application. In addition, according to the analyses of the high photoresponsivity and long photoresponse time, we conclude that the working mechanism of the device is photoconductive effect. The process of photons conversion into conducting electrons is also described in detail. Finally, according to the distinct difference between the photoresponses at 1550 nm and 808 nm, we estimate that the position of the trapping energy is somewhere between 0.4 eV and 0.76 eV, higher than the Fermi energy of MLG. Our work paves a new way for fabricating the graphene photoconductive photodetectors.
Keywords:  graphene photodetector      photoconductive effect     
Received:  08 September 2016      Published:  05 February 2017
PACS:  81.05.ue (Graphene)  
  85.60.Dw (Photodiodes; phototransistors; photoresistors)  
Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0402404), the High-Tech Research and Development Program of China (Grant Nos. 2013AA031401, 2015AA016902, and 2015AA016904), and the National Natural Science Foundation of China (Grant Nos. 61674136, 61176053, 61274069, and 61435002).
Corresponding Authors:  Qin Han     E-mail:  hanqin@semi.ac.cn

Cite this article: 

Yu-Bing Wang(王玉冰), Wei-Hong Yin(尹伟红), Qin Han(韩勤), Xiao-Hong Yang(杨晓红), Han Ye(叶焓), Qian-Qian Lv(吕倩倩), Dong-Dong Yin(尹冬冬) Photoconductive multi-layer graphene photodetectors fabricated on etched silicon-on-insulator substrates 2017 Chin. Phys. B 26 028101

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Yubing Wang(王玉冰), Weihong Yin(尹伟红), Qin Han(韩勤), Xiaohong Yang(杨晓红), Han Ye(叶焓), Qianqian Lv(吕倩倩), Dongdong Yin(尹冬冬). Chin. Phys. B, 2016, 25(11): 118103.
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