Effect of thermal pretreatment of metal precursor on the properties of Cu2ZnSnS4 films

doi:10.1088/1674-1056/24/5/056805

Abstract

Zn/Sn/Cu (CZT) stacks were prepared by RF magnetron sputtering. The stacks were pretreated at different temperatures (200 ℃, 300 ℃, 350 ℃, and 400 ℃) for 0.5 h and then followed by sulfurization at 500 ℃ for 2 h. Then, the structures, morphologies, and optical properties of the as-obtained Cu₂ZnSnS₄ (CZTS) films were studied by x-ray diffraction (XRD), Raman spectroscopy, UV–Vis–NIR, scanning electron microscope (SEM), and energy-dispersive x-ray spectroscopy (EDX). The XRD and Raman spectroscopy results indicated that the sample pretreated at 350 ℃ had no secondary phase and good crystallization. At the same time, SEM confirmed that it had large and dense grains. According to the UV–Vis–NIR spectrum, the sample had an absorption coefficient larger than 10⁴cm^-1 in the visible light range and a band gap close to 1.5 eV.

Keywords: Cu₂ZnSnS₄ (CZTS) films radio-frequency magnetron sputtering metal precursor pretreatment

Received: 16 August 2014
Revised: 10 December 2014
Accepted manuscript online:

PACS:	68.55.aj	(Insulators)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	88.40.jj	(Silicon solar cells)

Fund:

Project Project of Jiangsu Province, China (Grant No. BE2012103), and the Priority Academic Program Development of Jiangsu Higher Education Institutions, China.

Corresponding Authors: Shen Hong-Lie
E-mail: hlshen@nuaa.edu.cn

About author: 68.55.aj; 81.15.Gh; 88.40.JJ

Cite this article:

Wang Wei (王威), Shen Hong-Lie (沈鸿烈), Jin Jia-Le (金佳乐), Li Jin-Ze (李金泽), Ma Yue (马跃) Effect of thermal pretreatment of metal precursor on the properties of Cu₂ZnSnS₄ films 2015 Chin. Phys. B 24 056805

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Effect of thermal pretreatment of metal precursor on the properties of Cu2ZnSnS4 films

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Effect of thermal pretreatment of metal precursor on the properties of Cu₂ZnSnS₄ films