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Acta Physica Sinica (Overseas Edition), 1992, Vol. 1(1): 63-68    DOI: 10.1088/1004-423X/1/1/008
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev  

DYNAMICS OF CARRIER CAPTURE IN AlGaAs/GaAs MULTIPLE QUANTUM WELLS

LIN WEI-ZHU (林位株)a, PENG WEN-JI (彭文基)a, QIU ZHI-REN (丘志仁)a, ZHOU XUE-CONG (周学聪)a, MO DANG (莫党)b
a Institute of Laser and Spectroscopy, Zhongshan University, Guangzhou 510275, China; b Department of Physics, Zhongshan University, Guangzhou 510275, China
Abstract  Dynamics of carrier relaxation and capture in AlGaAs/GaAs multiple quantum wells (MQW) at 80 K is studied using picosecond luminescence and femtosecond absorption saturation measurements. Carriers generated in the wells and in the barriers scatter initially out of the excited states to a quasi-equilibrium state in 35 and 400 femtoseconds, respectively, before they are captured into the bound states of the quantum wells. Carrier capture occurs during carrier cooling and recombination. A carrier capture time of 25 ps has been deduced from time-resolved luminescence.
Received:  16 August 1991      Accepted manuscript online: 
PACS:  73.63.Hs (Quantum wells)  
  72.20.Jv (Charge carriers: generation, recombination, lifetime, and trapping)  
  78.67.De (Quantum wells)  
  78.55.Cr (III-V semiconductors)  
  78.47.-p (Spectroscopy of solid state dynamics)  
Fund: Project supported by the National Natural Science Foundation of China.

Cite this article: 

LIN WEI-ZHU (林位株), PENG WEN-JI (彭文基), QIU ZHI-REN (丘志仁), ZHOU XUE-CONG (周学聪), MO DANG (莫党) DYNAMICS OF CARRIER CAPTURE IN AlGaAs/GaAs MULTIPLE QUANTUM WELLS 1992 Acta Physica Sinica (Overseas Edition) 1 63

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