Please wait a minute...
Chin. Phys. B, 2020, Vol. 29(9): 095203    DOI: 10.1088/1674-1056/ab9436
PHYSICS OF GASES, PLASMAS, AND ELECTRIC DISCHARGES Prev   Next  

Effect of radio frequency bias on plasma characteristics of inductively coupled argon discharge based on fluid simulations

Xiao-Yan Sun(孙晓艳)1, Yu-Ru Zhang(张钰如)2, Sen Chai(柴森)3, You-Nian Wang(王友年)2, Yan-Yan Chu(楚艳艳)1, Jian-Xin He(何建新)1
1 Textile and Garment Industry of Research Institute, Zhongyuan University of Technology, Zhengzhou 450007, China;
2 Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams(Ministry of Education), School of Physics, Dalian University of Technology, Dalian 116024, China;
3 China Special Equipment Inspection and Research Institute, Beijing 100029, China
Abstract  A fluid model is employed to investigate the effect of radio frequency bias on the behavior of an argon inductively coupled plasma (ICP). In particular, the effects of ICP source power, single-frequency bias power, and dual-frequency bias power on the characteristics of ICP are simulated at a fixed pressure of 30 mTorr (1 Torr=1.33322×102 Pa). When the bias frequency is fixed at 27.12 MHz, the two-dimensional (2D) plasma density profile is significantly affected by the bias power at low ICP source power (e.g., 50 W), whereas it is weakly affected by the bias power at higher ICP source power (e.g., 100 W). When dual-frequency (27.12 MHz/2.26 MHz) bias is applied and the sum of bias powers is fixed at 500 W, a pronounced increase in the maximum argon ion density is observed with the increase of the bias power ratio in the absence of ICP source power. As the ratio of 27.12-MHz/2.26-MHz bias power decreases from 500 W/0 W to 0 W/500 W with the ICP source power fixed at 50 W, the plasma density profiles smoothly shifts from edge-high to center-high, and the effect of bias power on the plasma distribution becomes weaker with the bias power ratio decreasing. Besides, the axial ion flux at the substrate surface is characterized by a maximum at the edge of the substrate. When the ICP source power is higher, the 2D plasma density profiles, as well as the spatiotemporal and radial distributions of ion flux at the substrate surface are characterized by a peak in the reactor center, and the distributions of plasma parameters are negligibly affected by the dual-frequency bias power ratio.
Keywords:  fluid simulation      single- and dual-frequency bias power      plasma distribution  
Received:  01 April 2020      Revised:  10 May 2020      Published:  05 September 2020
PACS:  52.65.-y (Plasma simulation)  
  52.50.Qt (Plasma heating by radio-frequency fields; ICR, ICP, helicons)  
  52.30.Ex (Two-fluid and multi-fluid plasmas)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11875101 and 11905307).
Corresponding Authors:  Xiao-Yan Sun, Jian-Xin He     E-mail:  xysun@zut.edu.cn;hejianxin771117@163.com

Cite this article: 

Xiao-Yan Sun(孙晓艳), Yu-Ru Zhang(张钰如), Sen Chai(柴森), You-Nian Wang(王友年), Yan-Yan Chu(楚艳艳), Jian-Xin He(何建新) Effect of radio frequency bias on plasma characteristics of inductively coupled argon discharge based on fluid simulations 2020 Chin. Phys. B 29 095203

[1] Efremov A, Min N K, Jeong J, Kim Y and Kwon K 2010 Plasma Sources Sci. Technol. 19 045020
[2] Li J S, Wang J X, Yin M, Gao P Q, He D Y, Chen Q, Li Y L and Shirai H 2008 J. Appl. Phys. 103 043505
[3] Qin S and MCTeer A 2007 Surf. Coat. Technol. 201 6759
[4] Lee H C, Bang J Y and Chung C W 2011 Thin Solid Films 519 7009
[5] Lee H C, Oh S J and Chung C W 2012 Plasma Sources Sci. Technol. 21 035003
[6] Sobolewski M A and Kim J H 2007 J. Appl. Phys. 102 113302
[7] Ahr P, Schüngel E, Schulze J, Tsankov Ts V and Czarnetzki U 2015 Plasma Sources Sci. Technol. 24 044006
[8] Schulze J, Schüngel E and Czarnetzki U 2012 Appl. Phys. Lett. 100 024102
[9] Zaka-ul-lslam M, O'Connell D, Graham W G and Gans T 2015 Plasma Sources Sci. Technol. 24 044007
[10] Hoekstra R J and Kushner M J 1996 J. Appl. Phys. 79 2275
[11] Takekida H and Nanbu K 2005 J. Phys. D: Appl. Phys. 38 3461
[12] Tinck S, Boullart W and Bogaerts A 2008 J. Phys. D: Appl. Phys. 41 065207
[13] Kwon D C, Chang W S, Park M, You D H, Song M Y, You S J, Im Y H and Yoon J S 2011 J. Appl. Phys. 109 073311
[14] Gao F, Zhang Y R, Zhao S X, Li X C and Wang Y N 2014 Chin. Phys. B 23 115202
[15] Han C K, Yang Y Y, Liu W F, Lu Y J and Cheng J 2018 SPIN 8 1850002
[16] Jang H and Chae H 2017 Nano 12 1750025
[17] Si X J, Zhao S X, Xu X, Bogaerts A and Wang Y N 2011 Phys. Plasmas 18 033504
[18] Sun X Y, Zhang Y R, Li X C and Wang Y N 2015 Phys. Plasmas 22 053508
[19] Sun X Y, Zhang Y R, Li X C and Wang Y N 2017 Chin. Phys. B 26 015201
[20] Sun X Y, Zhang Y R, Chai S, Wang Y N and He J X 2019 Phys. Plasmas 26 043503
[21] Wang Y H, Liu W, Zhang Y R and Wang Y N 2015 Chin. Phys. B 24 095203
[22] Zhang Y R, Gao F, Li X C, Bogaerts A and Wang Y N 2015 J. Vac. Sci. Technol. A 33 061303
[23] Zhang Y R, Zhao Z Z, Xue C, Gao F and Wang Y N 2019 J. Phys. D: Appl. Phys. 52 295204
[24] Edelberg E A and Aydil E S 1999 J. Appl. Phys. 86 4799
[1] Fluid simulation of the pulsed bias effect on inductively coupled nitrogen discharges for low-voltage plasma immersion ion implantation
Xiao-Yan Sun(孙晓艳), Yu-Ru Zhang(张钰如), Xue-Chun Li(李雪春), You-Nian Wang(王友年). Chin. Phys. B, 2017, 26(1): 015201.
[2] Influence of dielectric materials on uniformity of large-area capacitively coupled plasmas for N2/Ar discharges
Ying-Shuang Liang(梁英爽), Yu-Ru Zhang(张钰如), You-Nian Wang(王友年). Chin. Phys. B, 2016, 25(10): 105206.
[3] Fluid simulation of inductively coupled Ar/O2 plasmas: Comparisons with experiment
Wang Yan-Hui, Liu Wei, Zhang Yu-Ru, Wang You-Nian. Chin. Phys. B, 2015, 24(9): 095203.
[4] Discontinuity of mode transition and hysteresis in hydrogen inductively coupled plasma via a fluid model
Xu Hui-Jing, Zhao Shu-Xia, Gao Fei, Zhang Yu-Ru, Li Xue-Chun, Wang You-Nian. Chin. Phys. B, 2015, 24(11): 115201.
No Suggested Reading articles found!