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Chin. Phys. B, 2020, Vol. 29(1): 018503    DOI: 10.1088/1674-1056/ab5fb7
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Infrared light-emitting diodes based on colloidal PbSe/PbS core/shell nanocrystals

Byung-Ryool Hyun1, Mikita Marus1, Huaying Zhong(钟华英)1, Depeng Li(李德鹏)1, Haochen Liu(刘皓宸)1, Yue Xie(谢阅)1, Weon-kyu Koh2, Bing Xu(徐冰)1,3, Yanjun Liu(刘言军)1, Xiao Wei Sun(孙小卫)1,3
1 Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, Department of Electrical&Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China;
2 School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore;
3 Shenzhen Planck Innovation Technologies Co. Ltd, Shenzhen 518112, China
Abstract  Colloidal PbSe nanocrystals (NCs) have gained considerable attention due to their efficient carrier multiplication and emissions across near-infrared and short-wavelength infrared spectral ranges. However, the fast degradation of colloidal PbSe NCs in ambient conditions hampers their widespread applications in infrared optoelectronics. It is well-known that the inorganic thick-shell over core improves the stability of NCs. Here, we present the synthesis of PbSe/PbS core/shell NCs showing wide spectral tunability, in which the molar ratio of lead (Pb) and sulfur (S) precursors, and the concentration of sulfur and PbSe NCs in solvent have a significant effect on the efficient PbS shell growth. The infrared light-emitting diodes (IR-LEDs) fabricated with the PbSe/PbS core/shell NCs exhibit an external quantum efficiency (EQE) of 1.3% at 1280 nm. The ligand exchange to optimize the distance between NCs and chloride treatment are important processes for achieving high performance on PbSe/PbS NC-LEDs. Our results provide evidence for the promising potential of PbSe/PbS NCs over the wide range of infrared optoelectronic applications.
Keywords:  PbSe/PbS core/shell nanocrystal      ligand exchange      infrared light-emitting diodes      external quantum efficiency  
Received:  16 October 2019      Revised:  26 November 2019      Published:  05 January 2020
PACS:  85.60.Jb (Light-emitting devices)  
  85.60.Bt (Optoelectronic device characterization, design, and modeling)  
  61.46.Df (Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots))  
  61.46.Hk (Nanocrystals)  
Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0401702), the National Natural Science Foundation of China (Grant Nos. 61674074 and 61405089), Development and Reform Commission of Shenzhen Project, China (Grant No. [2017]1395), Shenzhen Peacock Team Project, China (Grant No. KQTD2016030111203005), Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, China (Grant No. ZDSYS201707281632549), Guangdong Province's Key R&D Program: Micro-LED Display and Ultra-high Brightness Micro-display Technology, China (Grant No. 2019B010925001), Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, China (Grant No. 2017KSYS007), and Distinguished Young Scholar of National Natural Science Foundation of Guangdong, China (Grant No. 2017B030306010). We thank the start-up fund from Southern University of Science and Technology, Shenzhen, China.
Corresponding Authors:  Xiao Wei Sun     E-mail:  sunxw@sustech.edu.cn

Cite this article: 

Byung-Ryool Hyun, Mikita Marus, Huaying Zhong(钟华英), Depeng Li(李德鹏), Haochen Liu(刘皓宸), Yue Xie(谢阅), Weon-kyu Koh, Bing Xu(徐冰), Yanjun Liu(刘言军), Xiao Wei Sun(孙小卫) Infrared light-emitting diodes based on colloidal PbSe/PbS core/shell nanocrystals 2020 Chin. Phys. B 29 018503

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