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Chin. Phys. B, 2019, Vol. 28(7): 078501    DOI: 10.1088/1674-1056/28/7/078501

Effect of defects properties on InP-based high electron mobility transistors

Shu-Xiang Sun(孙树祥)1, Ming-Ming Chang(常明铭)1, Meng-Ke Li(李梦珂)1, Liu-Hong Ma(马刘红)1, Ying-Hui Zhong(钟英辉)1, Yu-Xiao Li(李玉晓)1, Peng Ding(丁芃)2, Zhi Jin(金智)2, Zhi-Chao Wei(魏志超)3
1 School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001, China;
2 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
3 China Academy of Space Technology, Beijing 100086, China

The performance damage mechanism of InP-based high electron mobility transistors (HEMTs) after proton irradiation has been investigated comprehensively through induced defects. The effects of the defect type, defect energy level with respect to conduction band ET, and defect concentration on the transfer and output characteristics of the device are discussed based on hydrodynamic model and Shockley-Read-Hall recombination model. The results indicate that only acceptor-like defects have a significant influence on device operation. Meanwhile, as defect energy level ET shifts away from conduction band, the drain current decreases gradually and finally reaches a saturation value with ET above 0.5 eV. This can be attributed to the fact that at sufficient deep level, acceptor-type defects could not be ionized any more. Additionally, the drain current and transconductance degrade more severely with larger acceptor concentration. These changes of the electrical characteristics with proton radiation could be accounted for by the electron density reduction in the channel region from induced acceptor-like defects.

Keywords:  InP-based high electron mobility transistor      proton radiation      defects properties      output and transfer characteristics  
Received:  14 March 2019      Revised:  17 April 2019      Accepted manuscript online: 
PACS:  85.30.De (Semiconductor-device characterization, design, and modeling)  
  73.61.Ey (III-V semiconductors)  
  14.20.Dh (Protons and neutrons)  

Project supported by the National Natural Science Foundation of China (Grant Nos. 11775191, 61404115, 61434006, and 11475256), the Development Fund for Outstanding Young Teachers in Zhengzhou University of China (Grant No. 1521317004), and the Doctoral Student Overseas Study Program of Zhengzhou University, China.

Corresponding Authors:  Ying-Hui Zhong     E-mail:

Cite this article: 

Shu-Xiang Sun(孙树祥), Ming-Ming Chang(常明铭), Meng-Ke Li(李梦珂), Liu-Hong Ma(马刘红), Ying-Hui Zhong(钟英辉), Yu-Xiao Li(李玉晓), Peng Ding(丁芃), Zhi Jin(金智), Zhi-Chao Wei(魏志超) Effect of defects properties on InP-based high electron mobility transistors 2019 Chin. Phys. B 28 078501

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