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Chin. Phys. B, 2016, Vol. 25(3): 037310    DOI: 10.1088/1674-1056/25/3/037310
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Fractional-dimensional approach for excitons in GaAsfilms on AlxGa1-xAs substrates

Zhen-Hua Wu(武振华)1, Lei Chen(陈蕾)2, Qiang Tian(田强)3
1. School of Physics and Optoelectronic Engineering, Xidian University, Xi'an 710071, China;
2. School of Science, Beijing University of Civil Engineering and Architecture, Beijing 100044, China;
3. Department of Physics, Beijing Normal University, Beijing 100875, China
Abstract  Binding energies of excitons in GaAs films on AlxGa1-xAs substrates are studied theoretically with the fractional-dimensional approach. In this approach, the real anisotropic “exciton+film” semiconductor system is mapped into an effective fractional-dimensional isotropic space. For different aluminum concentrations and substrate thicknesses, the exciton binding energies are obtained as a function of the film thickness. The numerical results show that, for different aluminum concentrations and substrate thicknesses, the exciton binding energies in GaAs films on AlxGa1-xAs substrates all exhibit their maxima with increasing film thickness. It is also shown that the binding energies of heavy-hole and light-hole excitons both have their maxima with increasing film thickness.
Keywords:  exciton binding energy      GaAs film      fractional-dimensional approach  
Received:  01 September 2015      Revised:  11 December 2015      Published:  05 March 2016
PACS:  73.61.-r (Electrical properties of specific thin films)  
  73.90.+f (Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11304011) and the Fundamental Research Funds for the Central Universities, China.
Corresponding Authors:  Qiang Tian     E-mail:  qtianbnu@sina.com

Cite this article: 

Zhen-Hua Wu(武振华), Lei Chen(陈蕾), Qiang Tian(田强) Fractional-dimensional approach for excitons in GaAsfilms on AlxGa1-xAs substrates 2016 Chin. Phys. B 25 037310

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