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Chin. Phys. B, 2014, Vol. 23(4): 047201    DOI: 10.1088/1674-1056/23/4/047201

Influence of the channel electric field distribution on the polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors

Yu Ying-Xiaa, Lin Zhao-Juna, Luan Chong-Biaoa, Lü Yuan-Jieb, Feng Zhi-Hongb, Yang Minga, Wang Yu-Tanga
a School of Physics, Shandong University, Jinan 250100, China;
b Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
Abstract  By making use of the quasi-two-dimensional (quasi-2D) model, the current-voltage (I-V) characteristics of In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors (HFETs) with different gate lengths are simulated based on the measured capacitance-voltage (C-V) characteristics and I-V characteristics. By analyzing the variation of the electron mobility for the two-dimensional electron gas (2DEG) with electric field, it is found that the different polarization charge distributions generated by the different channel electric field distributions can result in different polarization Coulomb field scatterings. The difference between the electron mobilities primarily caused by the polarization Coulomb field scatterings can reach up to 1522.9 cm2/V· s for the prepared In0.18Al0.82N/AlN/GaN HFETs. In addition, when the 2DEG sheet density is modulated by the drain-source bias, the electron mobility presents a peak with the variation of the 2DEG sheet density, the gate length is smaller, and the 2DEG sheet density corresponding to the peak point is higher.
Keywords:  In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors      channel electric field distribution      polarization Coulomb field scattering      two-dimensional electron gas mobility  
Received:  03 June 2013      Revised:  30 August 2013      Accepted manuscript online: 
PACS:  72.80.Ey (III-V and II-VI semiconductors)  
  72.10.-d (Theory of electronic transport; scattering mechanisms)  
  72.20.Fr (Low-field transport and mobility; piezoresistance)  
Fund: Projected supported by the National Natural Science Foundation of China (Grant No.11174182) and the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No.20110131110005).
Corresponding Authors:  Lin Zhao-Jun     E-mail:
About author:  72.80.Ey; 72.10.-d; 72.20.Fr

Cite this article: 

Yu Ying-Xia, Lin Zhao-Jun, Luan Chong-Biao, Lü Yuan-Jie, Feng Zhi-Hong, Yang Ming, Wang Yu-Tang Influence of the channel electric field distribution on the polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors 2014 Chin. Phys. B 23 047201

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