Sixteen-element Ge-on-SOI PIN photo-detector arrays for parallel optical interconnects

doi:10.1088/1674-1056/23/3/038507

Abstract We describe the structure and testing of one-dimensional array parallel-optics photo-detectors with 16 photodiodes of which each diode operates up to 8 Gb/s. The single element is vertical and top illuminated 30-μm-diameter silicon on insulator (Ge-on-SOI) PIN photodetector. High-quality Ge absorption layer is epitaxially grown on SOI substrate by the ultra-high vacuum chemical vapor deposition (UHV-CVD). The photodiode exhibits a good responsivity of 0.20 A/W at a wavelength of 1550 nm. The dark current is as low as 0.36 μA at a reverse bias of 1 V, and the corresponding current density is about 51 mA/cm². The detector with a diameter of 30 μm is measured at an incident light of 1.55 μm and 0.5 mW, and the 3-dB bandwidth is 7.39 GHz without bias and 13.9 GHz at a reverse bias of 3 V. The 16 devices show a good consistency.

Keywords: surface illuminate line array optical telecommunication parallel optical interconnects

Received: 05 June 2013
Revised: 13 August 2013
Accepted manuscript online:

PACS:	85.60.Gz	(Photodetectors (including infrared and CCD detectors))
	95.55.Aq	(Charge-coupled devices, image detectors, and IR detector arrays)
	85.30.De	(Semiconductor-device characterization, design, and modeling)

Corresponding Authors: Xue Chun-Lai
E-mail: clxue@semi.ac.cn

Cite this article:

Li Chong (李冲), Xue Chun-Lai (薛春来), Liu Zhi (刘智), Cheng Bu-Wen (成步文), Wang Qi-Ming (王启明) Sixteen-element Ge-on-SOI PIN photo-detector arrays for parallel optical interconnects 2014 Chin. Phys. B 23 038507

[1]	Xue H Y, Xue C L, Cheng B W, Yu Y D and Wang Q M 2009 Chin. Phys. B 18 2542
[2]	Li Y M, Hu W X, Cheng B W, Liu Z and Wang Q M 2012 Chin. Phys. Lett. 29 034205
[3]	Miller D A B 1997 Int. J. Optoelectron. 11 155
[4]	Xue C L, Xue H Y, Cheng B W, Hu W X, Yu Y D and Wang Q M 2009 J. Lightwave Technol. 27 5687
[5]	Li C, Xue C L, Liu Z, Cheng B W, Li C B and Wang Q M 2013 IEEE Trans. Electron Dev. 60 1183
[6]	Xue H Y, Xue C L, Cheng B W, Yu Y D and Wang Q M 2010 IEEE Elecron Dev. Lett. 31 701
[7]	Cheng B W, Xue H Y, Hu D, Han G Q, Zeng Y G, Bai A Q, Xue C L, Luo L P, Zuo Y H and Wang Q M 2008 Process 5th IEEE International Conference on Group IV Photonics, 2008, Sorrento, Italy, p. 140
[8]	Wöhl G, Oehme M, Parry C, Kasper E, Jutzi M, Berroth M and Voorneman E 2003 Third International Conference in SiGe(C) Epitaxy and Heterostructures, 2003, Santa Fe, NM, p. 77
[9]	Wang X X and Liu J F 2011 IEEE Photon. Technol. Lett. 23 146
[10]	Oehme M, Werner J, Kasper E, Jutzi M and Berroth M 2006 Appl. Phys. Lett. 89 071117
[11]	Wu Z, Wang C, Yan G M, Liu G Z, Li C, Huang W, Lai H K and Chen S Y 2012 Acta Phys. Sin. 61 186105 (in Chinese)

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Sixteen-element Ge-on-SOI PIN photo-detector arrays for parallel optical interconnects

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