Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor

doi:10.1088/1674-1056/22/6/067203

Abstract We simulate the current-voltage (I-V) characteristics of the AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with different gate lengths using the quasi-two-dimensional (quasi-2D) model. The calculation results obtained using modified mobility model are found to accord well with the experimental data. By analyzing the variation of the electron mobility for the two-dimensional electron gas (2DEG) with the electric field in the linear region of the AlGaN/AlN/GaN HFET I-V output characteristics, it is found that the polarization Coulomb field scattering still plays an important role in the electron mobility of AlGaN/AlN/GaN HFET at the higher drain voltage and channel electric field. As drain voltage and channel electric field increase, the 2DEG density reduces and the polarization Coulomb field scattering increases, as a result, the 2DEG electron mobility decreases.

Keywords: AlGaN/AlN/GaN heterostructure field-effect transistors quasi-two-dimensional model the polarization Coulomb field scattering the two-dimensional electron gas mobility

Received: 27 September 2012
Revised: 26 November 2012
Accepted manuscript online:

PACS:	72.80.Ey	(III-V and II-VI semiconductors)
	72.10.-d	(Theory of electronic transport; scattering mechanisms)
	72.20.Fr	(Low-field transport and mobility; piezoresistance)

Fund: Projected supported by the National Natural Science Foundation of China (Grant No. 11174182) and the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20110131110005).

Corresponding Authors: Lin Zhao-Jun
E-mail: linzj@sdu.edu.cn

Cite this article:

Yu Ying-Xia (于英霞), Lin Zhao-Jun (林兆军), Luan Chong-Biao (栾崇彪), Wang Yu-Tang (王玉堂), Chen Hong (陈弘), Wang Zhan-Guo (王占国) Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor 2013 Chin. Phys. B 22 067203

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[1]	Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors Yan Liu(刘艳), Zhao-Jun Lin(林兆军), Yuan-Jie Lv(吕元杰), Peng Cui(崔鹏), Chen Fu(付晨), Ruilong Han(韩瑞龙), Yu Huo(霍宇), Ming Yang(杨铭). Chin. Phys. B, 2017, 26(9): 097104.

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Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor

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