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Chin. Phys. B, 2013, Vol. 22(6): 067203    DOI: 10.1088/1674-1056/22/6/067203

Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor

Yu Ying-Xiaa, Lin Zhao-Juna, Luan Chong-Biaoa, Wang Yu-Tanga, Chen Hongb, Wang Zhan-Guoc
a School of Physics, Shandong University, Jinan 250100, China;
b Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
c Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract  We simulate the current-voltage (I-V) characteristics of the AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with different gate lengths using the quasi-two-dimensional (quasi-2D) model. The calculation results obtained using modified mobility model are found to accord well with the experimental data. By analyzing the variation of the electron mobility for the two-dimensional electron gas (2DEG) with the electric field in the linear region of the AlGaN/AlN/GaN HFET I-V output characteristics, it is found that the polarization Coulomb field scattering still plays an important role in the electron mobility of AlGaN/AlN/GaN HFET at the higher drain voltage and channel electric field. As drain voltage and channel electric field increase, the 2DEG density reduces and the polarization Coulomb field scattering increases, as a result, the 2DEG electron mobility decreases.
Keywords:  AlGaN/AlN/GaN heterostructure field-effect transistors      quasi-two-dimensional model      the polarization Coulomb field scattering      the two-dimensional electron gas mobility  
Received:  27 September 2012      Revised:  26 November 2012      Accepted manuscript online: 
PACS:  72.80.Ey (III-V and II-VI semiconductors)  
  72.10.-d (Theory of electronic transport; scattering mechanisms)  
  72.20.Fr (Low-field transport and mobility; piezoresistance)  
Fund: Projected supported by the National Natural Science Foundation of China (Grant No. 11174182) and the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20110131110005).
Corresponding Authors:  Lin Zhao-Jun     E-mail:

Cite this article: 

Yu Ying-Xia, Lin Zhao-Jun, Luan Chong-Biao, Wang Yu-Tang, Chen Hong, Wang Zhan-Guo Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor 2013 Chin. Phys. B 22 067203

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