Simulation of near-infrared photodiode detectors based on β-FeSi2/4H-SiC heterojunction

doi:10.1088/1674-1056/22/3/037301

Abstract In this paper, we propose the near-infrared p-type β-FeSi₂/n-type 4H-SiC heterojunction photodetector with semiconducting silicide (β-FeSi₂) as the active region for the first time. Optoelectronic characteristics of the photodetector are simulated using a commercial simulator at room temperature. The results show that the photodetector has a good rectifying character and a good response to the near-infrared light. Interface states should be minimized to obtain a lower reverse leakage current. The response spectrum of the β-FeSi₂/4H-SiC detector, which consists of a p-type β-FeSi₂ absorption layer with a doping concentration of 1×10¹⁵ cm^-3 and a thickness of 2.5 μm, has a peak of 755 mA/W at 1.42 μm. The illumination of the SiC side obtains a higher responsivity than that of the β-FeSi₂ side. The results illustrate that the β-FeSi₂/4H-SiC heterojunction can be used as a near-infrared photodetector compatible with near-infrared optically-activated SiC-based power switching devices.

Keywords: β-FeSi₂/4H-SiC near-infrared photodetector spectral response

Received: 20 April 2012
Revised: 30 August 2012
Accepted manuscript online:

PACS:	73.40.Lq	(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	85.60.Dw	(Photodiodes; phototransistors; photoresistors)
	71.15.Pd	(Molecular dynamics calculations (Car-Parrinello) and other numerical simulations)
	61.43.Dq	(Amorphous semiconductors, metals, and alloys)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60876050 and 51177134).

Corresponding Authors: Pu Hong-Bin
E-mail: puhongbin@xaut.edu.cn

Cite this article:

Pu Hong-Bin (蒲红斌), He Xin (贺欣), Quan Ru-Dai (全汝岱), Cao Lin (曹琳), Chen Zhi-Ming (陈治明) Simulation of near-infrared photodiode detectors based on β-FeSi₂/4H-SiC heterojunction 2013 Chin. Phys. B 22 037301

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Simulation of near-infrared photodiode detectors based on β-FeSi2/4H-SiC heterojunction

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Simulation of near-infrared photodiode detectors based on β-FeSi₂/4H-SiC heterojunction