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Chin. Phys. B, 2013, Vol. 22(2): 029401    DOI: 10.1088/1674-1056/22/2/029401
GEOPHYSICS, ASTRONOMY, AND ASTROPHYSICS Prev   Next  

Temperature dependence of single event transient in 90-nm CMOS dual-well and triple-well NMOSFETs

Li Da-Wei, Qin Jun-Rui, Chen Shu-Ming
College of Computer, National University of Defense Technology, Changsha 410073, China
Abstract  This paper investigates the temperature dependence of single event transient (SET) in 90-nm complementary metat-oxide semiconductor (CMOS) dual-well and triple-well negative metal-oxide semiconductor field-effect transistors (NMOSFETs). Technology computer-aided design (TCAD) three-dimensional (3D) simulations show that the drain current pulse duration increases from 85 ps to 245 ps for triple-well but only increases from 65 ps to 98 ps for dual-well when the temperature increases from -55℃ to 125℃, which is closely correlated with the source of NMOSFETs. This reveals that the pulse width increases with temperature in dual-well due to the weakening of anti-amplification bipolar effect while increases with temperature in triple-well due to the enhancement of the bipolar amplification.
Keywords:  single event transient      temperature dependence dual-well      triple-well      N+ deep well  
Received:  30 June 2012      Revised:  17 August 2012      Published:  01 January 2013
PACS:  94.05.Dd (Radiation processes)  
  85.30.Tv (Field effect devices)  
  02.60.Cb (Numerical simulation; solution of equations)  
Fund: Project supported by the State Key Program of the National Natural Science Foundation of China (Grant No. 60836004) and Innovation Foundation for Postgraduate of Hunan Province, China (Grant No. CX2011B026).
Corresponding Authors:  Qin Jun-Rui     E-mail:  qinjr@nudt.edu.cn

Cite this article: 

Li Da-Wei, Qin Jun-Rui, Chen Shu-Ming Temperature dependence of single event transient in 90-nm CMOS dual-well and triple-well NMOSFETs 2013 Chin. Phys. B 22 029401

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