Low-voltage antimony-doped SnO2 nanowire transparent transistors gated by microporous SiO2-based proton conductors

doi:10.1088/1674-1056/21/8/088104

Abstract A battery drivable low-voltage transparent lightly antimony(Sb)-doped SnO₂ nanowire electric-double-layer (EDL) field-effect transistor (FET) is fabricated on an ITO glass substrate at room temperature. An ultralow operation voltage of 1 V is obtained on account of untralarge specific gate capacitance (～ 2.14 μF/cm²) directly bound up with mobile ions-induced EDL (sandwiched between top electrode and bottom electrode) effect. The transparent FET shows excellent electric characteristics with a field-effect mobility of 54.43 cm²/V·s, current on/off ration of 2× 10⁴, and subthreshold gate voltage swing (S=d V_gs/d(log I_ds)) of 140 mV/decade. The threshold voltage V_th (0.1 V) is estimated which indicates that SnO₂ namowire transistor operates in an n-type enhanced mode. Such a low-voltage transparent nanowire transistor gated by microporous SiO₂-based solid electrolyte is very promising for battery-powered portable nanoscale sensor.

Keywords: electric double layer proton conductor solid electrolytes nanowire transistors

Received: 16 January 2012
Revised: 25 April 2012
Accepted manuscript online:

PACS:	81.07.Gf	(Nanowires)
	72.80.Ey	(III-V and II-VI semiconductors)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 10874042).

Corresponding Authors: Xuan Rui-Jie
E-mail: xuanruijie1988@126.com

Cite this article:

Xuan Rui-Jie (轩瑞杰), Liu Hui-Xuan (刘慧宣 ) Low-voltage antimony-doped SnO₂ nanowire transparent transistors gated by microporous SiO₂-based proton conductors 2012 Chin. Phys. B 21 088104

[1]	Law M, Greene L E, Johnson J C, Saykally R and Yang P D 2005 Nat. Mater. 4 455
[2]	EricN D, Wan Q, Guo W, Chen Y B, Pan X Q and Lu W 2007 Nano Lett. 7 2463
[3]	Zhong Z H, Wang D L, Cui Y, Bockrath M W and Lieber C M 2003 Science 302 1377
[4]	Kolmakov A, Zhang Y X, Cheng G S and Moskovits M 2003 Adv. Mater. 5 997
[5]	Samson S and Fonstad C G 1973 J. Appl. Phys. 44 4618
[6]	Wang Z L 2003 Adv. Mater. 15 432
[7]	Comini E, Faglia G, Sberveglieri G, Pan Z W and Wang Z L 2002 Appl. Phys. Lett. 81 1869
[8]	Li Q H, Chen Y L, Wan Q and Wang T H 2004 Appl. Phys. Lett. 85 1805
[9]	Li M, Zhang H Y, Guo C X, Xu J B and Fu X J 2009 Chin. Phys. B 18 1594
[10]	Li M, Zhang H Y, Guo C X, Xu J B, Fu X J and Chen P F 2009 Chin. Phys. B 18 5020
[11]	Dattoli E N, Kim K H, Fung W Y, Choi S Y and Lu W 2009 IEEE Electron Dev. Lett. 30 730
[12]	Kelley T W, Baude P F, Gerlach C, Ender D E, Muyres D, Haase M A, Vogel D E and Theiss S D 2004 Chem. Mater. 16 4413
[13]	Fortunato E M C, Barquinha P M C, Pimentel A C M B G, Gonçalves A M F, Marques A J S, Pereira L M N and Martins R F P 2005 Adv. Mater. 17 590
[14]	Kim C S, Jo S J, Lee S W, Kim W J, Baik H K, Lee S J, Hwang D K and Im S 2006 Appl. Phys. Lett. 88 243515
[15]	Lu A X, Sun J, Jiang J and Wan Q 2010 Appl. Phys. Lett. 96 043114
[16]	Sun J, Jiang J, Lu A X and Wan Q 2010 J. Phys. D: Appl. Phys. 43 295103
[17]	Sun J, Tang Q X, Lu A X, Jiang X J and Wan Q 2009 Nano Technol. 20 255202
[18]	Yan F, Migliorato P, Hong Y, Rana V, Ishihara R, Hiroshima Y, Abe D, Inoue S and Shimoda T 2005 Appl. Phys. Lett. 86 253504
[19]	Godet J and Pasquarello A 2006 Phys. Rev. Lett. 97 155901
[20]	Lee J, Kaake L G, Cho J H, Zhu X Y, Lodge T P and Frisbie C D 2009 J. Phys. Chem. C 113 8972
[21]	Debye P 1936 Chem. Rev. 19 171
[22]	Hoffman R L 2004 J. Appl. Phys. 95 5813

[1]	Observation of source/drain bias-controlled quantum transport spectrum in junctionless silicon nanowire transistor Yang-Yan Guo(郭仰岩), Wei-Hua Han(韩伟华), Xiao-Di Zhang(张晓迪), Jun-Dong Chen(陈俊东), and Fu-Hua Yang(杨富华). Chin. Phys. B, 2022, 31(1): 017701.
[2]	Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in siliconjunctionless nanowire transistors Yang-Yan Guo(郭仰岩), Wei-Hua Han(韩伟华), Xiao-Song Zhao(赵晓松), Ya-Mei Dou(窦亚梅), Xiao-Di Zhang(张晓迪), Xin-Yu Wu(吴歆宇), Fu-Hua Yang(杨富华). Chin. Phys. B, 2019, 28(10): 107303.
[3]	Reversal current observed in micro-and submicro-channel flow under non-continuous DC electric field Yi-fei Duan(段一飞), Hong-wei Ma(马宏伟), Ze-yang Gao(高泽阳), Kai-ge Wang(王凯歌), Wei Zhao(赵伟), Dan Sun(孙聃), Gui-ren Wang(王归仁), Jun-jie Li(李俊杰), Jin-tao Bai(白晋涛), Chang-zhi Gu(顾长志). Chin. Phys. B, 2017, 26(6): 068203.
[4]	Development of mean-field electrical double layer theory Yike Huang(黄一珂), Xiaohong Liu(刘晓红), Shu Li(李姝), Tianying Yan(言天英). Chin. Phys. B, 2016, 25(1): 016801.
[5]	All-solid-state lithium batteries with inorganic solid electrolytes: Review of fundamental science Xiayin Yao(姚霞银), Bingxin Huang(黄冰心), Jingyun Yin(尹景云), Gang Peng(彭刚), Zhen Huang(黄祯), Chao Gao(高超), Deng Liu(刘登), Xiaoxiong Xu(许晓雄). Chin. Phys. B, 2016, 25(1): 018802.
[6]	Charge trapping in surface accumulation layer of heavily doped junctionless nanowire transistors Ma Liu-Hong (马刘红), Han Wei-Hua (韩伟华), Wang Hao (王昊), Yang Xiang (杨香), Yang Fu-Hua (杨富华). Chin. Phys. B, 2015, 24(12): 128101.
[7]	Quantum transport characteristics in single and multiple N-channel junctionless nanowire transistors at low temperatures Wang Hao (王昊), Han Wei-Hua (韩伟华), Ma Liu-Hong (马刘红), Li Xiao-Ming (李小明), Yang Fu-Hua (杨富华). Chin. Phys. B, 2014, 23(8): 088107.
[8]	Enhanced etching of silicon dioxide guided by carbon nanotubes in HF solution Zhao Hua-Bo(赵华波), Ying Alex Yi-Qun(应轶群), Yan Feng(严峰), Wei Qin-Qin(魏芹芹), Fu Yun-Yi(傅云义), Zhang Yan(张岩), Li Yan(李彦), Wei Zi-Jun(魏子钧), and Zhang Zhao-Hui(张朝晖) . Chin. Phys. B, 2011, 20(10): 108103.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Low-voltage antimony-doped SnO2 nanowire transparent transistors gated by microporous SiO2-based proton conductors

Cite this article:

Online attention

Low-voltage antimony-doped SnO₂ nanowire transparent transistors gated by microporous SiO₂-based proton conductors