Surface segregation of InGaAs films by the evolution of reflection high-energy electron diffraction patterns

doi:10.1088/1674-1056/21/4/046103

Abstract Surface segregation is studied via the evolution of reflection high-energy electron diffraction (RHEED) patterns under different values of As₄ BEP for InGaAs films. When the As₄ BEP is set to be zero, the RHEED pattern keeps a 4×3/(n×3) structure with increasing temperature, and surface segregation takes place until 470 ℃. The RHEED pattern develops into a metal-rich (4×2) structure as temperature increases to 495 ℃. The reason for this is that surface segregation makes the In inside the InGaAs film climb to its surface. With the temperature increasing up to 515 ℃, the RHEED pattern turns into a GaAs(2×4) structure due to In desorption. While the As₄ BEP comes up to a specific value (1.33×10^-4 Pa-1.33×10^-3 Pa), the surface temperature can delay the segregation and desorption. We find that As₄ BEP has a big influence on surface desorption, while surface segregation is more strongly dependent on temperature than surface desorption.

Keywords: reflection high-energy electron diffraction InGaAs films surface segregation surface desorption

Received: 30 July 2011
Revised: 04 October 2011
Accepted manuscript online:

PACS:	61.72.uj	(III-V and II-VI semiconductors)
	68.65.-k	(Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60866001), the Special Assistant to High- Level Personnel Research Projects of Guizhou Provincial Party Committee Organization Department of China (Grant No. TZJF- 2008-31), the Support Plan of New Century Excellent Talents of Ministry of Education, China (Grant No. NCET-08-0651), the Doctorate Foundation of the State Education Ministry of China (Grant No. 20105201110003), the Special Governor Fund of Outstanding Professionals in Science and Technology and Education of Guizhou Province, China (Grant No. 2009114), the Doctoral Foundation Projects of Guizhou College of Finance and Economics in 2010.

Corresponding Authors: Ding Zhao,zding@gzu.edu.cn
E-mail: zding@gzu.edu.cn

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Zhou Xun(周勋), Luo Zi-Jiang(罗子江), Guo Xiang(郭祥), Zhang Bi-Chan(张毕禅), Shang Lin-Tao(尚林涛), Zhou Qing(周清), Deng Chao-Yong(邓朝勇), and Ding Zhao(丁召) Surface segregation of InGaAs films by the evolution of reflection high-energy electron diffraction patterns 2012 Chin. Phys. B 21 046103

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Surface segregation of InGaAs films by the evolution of reflection high-energy electron diffraction patterns

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