Chin. Phys. B, 2010, Vol. 19(4): 047310    DOI: 10.1088/1674-1056/19/4/047310
 CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next

# Pressure effect study on the I－V property of the GaAs-based resonant tunnelling structure by photoluminescence measurement

Wang Kai-Quna, Jian Ao-Quna, Zhang Bin-Zhena, Li Qiu-Zhub, Liu Xinb
a Key Laboratory of Instrumentation Science and Dynamic Measurement (North University of China), Ministry of Education, Taiyuan {\rm 030051, China; b National Key Laboratory for Electronic Measurement Technology, North University of China, Taiyuan 030051, China
Abstract  This paper discusses the $I$--$V$ property of the GaAs-based resonant tunnelling structure (RTS) under external uniaxial pressure by photoluminescence studies. Compressive pressure parallel to the [110] direction, whose value is determined by Hooke's law, is imposed on the sample by a helix micrometer. With the increase of the applied external uniaxial compressive pressure, the blue shift and splitting of the luminescence peaks were observed, which have some influence on the $I$--$V$ curve of RTS from the point of view of the energy gap, and the splitting became more apparent with applied pressure. Full width at half maximum broadening could also be observed.
Received:  29 July 2009      Published:  15 April 2010
 PACS: 85.30.Mn (Junction breakdown and tunneling devices (including resonance tunneling devices)) 85.30.Kk (Junction diodes) 78.55.Cr (III-V semiconductors)
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos.~50775209 and 50730009).