Deep level transient spectroscopy investigation of deep levels in CdS/CdTe thin film solar cells with Te:Cu back contact

doi:10.1088/1674-1056/19/2/027303

Abstract Deep levels in Cds/CdTe thin film solar cells have a potent influence on the electrical property of these devices. As an essential layer in the solar cell device structure, back contact is believed to induce some deep defects in the CdTe thin film. With the help of deep level transient spectroscopy (DLTS), we study the deep levels in CdS/CdTe thin film solar cells with Te:Cu back contact. One hole trap and one electron trap are observed. The hole trap H1, localized at E_v+0.128 eV, originates from the vacancy of Cd (V_Cd). The electron trap E1, found at E_c-0.178 eV, is considered to be correlated with the interstitial Cu_i⁺ in CdTe.

Keywords: deep level transient spectroscopy CdS/CdTe solar cells Te:Cu back contact

Received: 16 May 2009
Revised: 08 July 2009
Accepted manuscript online:

PACS:	71.55.Gs	(II-VI semiconductors)
	84.60.Jt	(Photoelectric conversion)
	84.60.Bk	(Performance characteristics of energy conversion systems; figure of merit)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60506004) and the National High Technology Research and Development Program of China (Grant No. 2003AA513010).

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Wang Zhao(王钊), Li Bing(黎兵), Zheng Xu(郑旭), Xie Jing(谢婧), Huang Zheng(黄征), Liu Cai(刘才), Feng Liang-Huan(冯良桓), and Zheng Jia-Gui(郑家贵) Deep level transient spectroscopy investigation of deep levels in CdS/CdTe thin film solar cells with Te:Cu back contact 2010 Chin. Phys. B 19 027303

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Deep level transient spectroscopy investigation of deep levels in CdS/CdTe thin film solar cells with Te:Cu back contact

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