No-catalyst growth of vertically-aligned AlN nanocone field electron emitter arrays with high emission performance at low temperature

doi:10.1088/1674-1056/19/10/107205

Abstract The AlN nanostructures with a wide band-gap of 6.28 eV are considered as ideal cold cathode materials because of their low electron-affinity. Many methods have been devoted to fabricating AlN nanostructures, but high growth temperature over 800 ℃ and the use of the catalysts in most methods limit their practical application and result in their poor field-emission behaviours in uniformity. This paper reports that without any catalysts, a simple chemical vapour deposition method is used to synthesize aligned AlN nanocone arrays at 550 ℃ on silicon substrate or indium tin oxide glass. Field emission measurements show that these nanocones prepared at low temperature have an average turn-on field of 6 V/μm and a threshold field of 11.7 V/μm as well as stable emission behaviours at high field, which suggests that they have promising applications in field emission area.

Keywords: AlN nanocone low-temperature growth no-catalyst field-emission

Received: 18 March 2010
Revised: 23 April 2010
Accepted manuscript online:

PACS:	61.46.Df	(Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots))
	71.20.Nr	(Semiconductor compounds)
	79.70.+q	(Field emission, ionization, evaporation, and desorption)
	81.16.Hc	(Catalytic methods)
	85.45.Db	(Field emitters and arrays, cold electron emitters)

Fund: Project supported by the National Basic Research Program of China (973 Program, Grant No. 2007CB935500), 863 Program (Grant No. 2007AA03Z305), Science Foundation for Young Scholars (Grant No. 50802117), the National Joint Science Fund with Guangdong Province (Grant Nos. U0634002 and U0734003), the Doctoral Foundation of Educational Ministry of China (Grant Nos. 20070558063 and 09lgpy28), the Science and Technology Foundation of the Educational Department of Guangdong Province, and the Science and Technology Department of Guangzhou City.

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Liu Fei(刘飞), Mo Fu-Yao(莫富尧), Li Li(李力), Su Zan-Jia(苏赞加), Huang Ze-Qiang(黄泽强), Deng Shao-Zhi(邓少芝), Chen Jun(陈军), and Xu Ning-Sheng(许宁生) No-catalyst growth of vertically-aligned AlN nanocone field electron emitter arrays with high emission performance at low temperature 2010 Chin. Phys. B 19 107205

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No-catalyst growth of vertically-aligned AlN nanocone field electron emitter arrays with high emission performance at low temperature

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