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Chin. Phys. B, 2008, Vol. 17(5): 1645-1651    DOI: 10.1088/1674-1056/17/5/020
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Design and analysis of doped left-handed materials

Zhang Hong-Xin(张洪欣)a), Bao Yong-Fang(包永芳)c), Lü Ying-Hua(吕英华)b), Chen Tian-Ming(陈天明)a), and Wang Hai-Xia(王海侠)b)
a School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing 100876, China; b Institute of Communication and Network Technology, Beijing University of Posts and Telecommunications, Beijing 100876, China; c University of Electronic Science and Technology of China, Chengdu 610054, China
Abstract  We devise three sorts of doped left-handed materials (DLHMs) by introducing inductors and capacitors into the traditional left-handed material (LHM) as heterogeneous elements. Some new properties are presented through finite-difference time-domain (FDTD) simulations. On the one hand, the resonance in the traditional LHM is weakened and the original pass band is narrowed by introducing inductors. On the other hand, the original pass band of the LHM can be shifted and a new pass band can be generated by introducing capacitors. When capacitors and inductors are introduced simultaneously, the resonance of traditional LHM is somewhat weakened and the number of original pass bands as well as its bandwidth can be changed.
Keywords:  LHMs      doped materials      forbidden band      pass band  
Received:  13 August 2007      Revised:  09 November 2007      Accepted manuscript online: 
PACS:  42.70.-a (Optical materials)  
  02.70.Bf (Finite-difference methods)  
  84.32.Hh (Inductors and coils; wiring)  
  84.32.Tt (Capacitors)  
  84.40.-x (Radiowave and microwave (including millimeter wave) technology)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos 60671055 and 60771060) and Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant Nos 20070013002 and 20070013004).

Cite this article: 

Zhang Hong-Xin(张洪欣), Bao Yong-Fang(包永芳), Lü Ying-Hua(吕英华), Chen Tian-Ming(陈天明), and Wang Hai-Xia(王海侠) Design and analysis of doped left-handed materials 2008 Chin. Phys. B 17 1645

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