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Chinese Physics, 2006, Vol. 15(4): 813-817    DOI: 10.1088/1009-1963/15/4/024
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Semi-quantitative study on the Staebler--Wronski effect of hydrogenated amorphous silicon films prepared with HW-ECR-CVD system

Ding Yi (丁毅)a, Liu Guo-Han (刘国汉)a, Chen Guang-Hua (陈光华)b, He De-Yan (贺德衍)a, Zhu Xiu-Hong (朱秀红)b, Zhang Wen-Li (张文理)b, He Bin (何斌)b, Zhang Xiao-Kang (张晓康)a, Tian Ling (田凌)a, Ma Zhan-Jie (马占杰)b
a School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China; b The Key Laboratory of Advanced Functional Materials, Ministry of Education of China, Beijing University of Technology, Beijing 100022, China
Abstract  The method of numerical simulation is used to fit the relationship between the photoconductivity in films and the illumination time. The generation and process rule of kinds of different charged defect states during illumination are revealed. It is found surprisingly that the initial photoconductivity determines directly the total account of photoconductivity degradation of sample.
Keywords:  hydrogenated amorphous silicon      Staebler--Wronski effect      microwave electron cyclotron resonant chemical vapour deposition      charged defects  
Received:  15 December 2005      Revised:  03 January 2006      Accepted manuscript online: 
PACS:  73.50.Pz (Photoconduction and photovoltaic effects)  
  68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.)  
  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
Fund: Project supported by the National Basic Research Program of China (Grant No G2000028201).

Cite this article: 

Ding Yi (丁毅), Liu Guo-Han (刘国汉), Chen Guang-Hua (陈光华), He De-Yan (贺德衍), Zhu Xiu-Hong (朱秀红), Zhang Wen-Li (张文理), He Bin (何斌), Zhang Xiao-Kang (张晓康), Tian Ling (田凌), Ma Zhan-Jie (马占杰) Semi-quantitative study on the Staebler--Wronski effect of hydrogenated amorphous silicon films prepared with HW-ECR-CVD system 2006 Chinese Physics 15 813

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