Analytical analysis of surface potential for grooved-gate MOSFET
Zhang Xiao-Ju (张晓菊), Gong Xin (龚欣), Wang Jun-Ping (王俊平), Hao Yue (郝跃)
Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Microelectronics Institute, Xidian University,Xi'an 710071, China
Abstract The improvement of the characteristics of grooved-gate MOSFETs compared to the planar devices is attributed to the corner effect of the surface potential along the channel. In this paper we propose an analytical model of the surface potential distribution based on the solution of two-dimensional Poisson equation in cylindrical coordinates utilizing the cylinder approximation and the structure parameters such as the concave corner $\theta _0 $. The relationship between the minimum surface potential and the structure parameters is theoretically analysed. Results confirm that the bigger the concave corner, the more obvious the corner effect. The corner effect increases the threshold voltage of the grooved-gate MOSFETs, so the better is the short channel effect (SCE) immunity.
Received: 26 July 2005
Revised: 28 December 2005
Accepted manuscript online:
Fund: Project supported by the National Natural Science Foundation of China (Grant No 603776024).
Cite this article:
Zhang Xiao-Ju (张晓菊), Gong Xin (龚欣), Wang Jun-Ping (王俊平), Hao Yue (郝跃) Analytical analysis of surface potential for grooved-gate MOSFET 2006 Chinese Physics 15 631
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