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Chinese Physics, 2004, Vol. 13(11): 1962-1964    DOI: 10.1088/1009-1963/13/11/036
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Thermally-assisted tunnelling of magnetization in (Mn0.96Cr0.04)12-ac

He Lun-Hua (何伦华)ab, Cao Hui-Bo (曹慧波)b, Wang Fang-Wei (王芳卫)b
a Department of Physics, Fudan University, Shanghai 200433, China; b State Key Laboratory for Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
Abstract  The thermally assisted resonant tunnelling in a single crystal (Mn0.96Cr0.04)12-ac is studied in this paper. The obtained hysteresis loops at seven different temperatures between 1.8 and 3K show obvious dependence on temperature. The magnetization steps occur at specific field values of nHR with HR≈0.46T, which are approximately independent of the temperature. As the temperature decreases, the area enclosed in the hysteresis loops and the actual number n of the resonances increase, which provides clear evidence of thermally assisted resonant tunnelling in (Mn0.96Cr0.04)12-ac.
Keywords:  quantum tunnelling      thermally assisted resonant tunnelling  
Received:  09 May 2004      Revised:  03 June 2004      Accepted manuscript online: 
PACS:  73.40.Gk (Tunneling)  
  75.60.Ej (Magnetization curves, hysteresis, Barkhausen and related effects)  
  03.65.Xp (Tunneling, traversal time, quantum Zeno dynamics)  

Cite this article: 

He Lun-Hua (何伦华), Cao Hui-Bo (曹慧波), Wang Fang-Wei (王芳卫) Thermally-assisted tunnelling of magnetization in (Mn0.96Cr0.04)12-ac 2004 Chinese Physics 13 1962

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