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PHOTOLUMINESCENCE STUDY ON Hg1-xCdxTe THIN FILM IMPLANTED WITH As ION
CHANG YONG (常勇), CHU JUN-HAO (褚君浩), TANG WEN-GUO (唐文国), SHEN WEN-ZHONG (沈文忠), LI ZI-YUAN (李自元), TANG DING-YUAN (汤定元), GUO SHI-PING (郭世平), YUAN SHI-XIN (袁诗鑫)
Acta Physica Sinica (Overseas Edition), 1995, 4 (8):
606-611.
DOI: 10.1088/1004-423X/4/8/006
Photoluminescence spectra of a series of MBE-grown Hg1-xCdxTe samples with the same mole fraction of about x≈0.39 have been measured at different temperatures from 5 to 100 K. By aid of the temperature and exciting laser power dependence of photoluminescence peak energy and relative intensity, as well as of the comparison with other measurements, four main structures dominating in the photoluminescence spectra are attributed to band to band, DoX, AoX and DoAo transitions. A deep donor state level located at about 8.5meV below the bottom of the conduction band has been observed and is determined to be due to the arsenic-occupied mercury vacancies. Two acceptor levels located at about 14.5 meV and about 31.5 meV above the top of the valance band have also been found from the measuements, which are identified as the mercury vacancies and As in anion site, respectively.
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