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Preparation of hydrogenated microcrystalline silicon films with hot-wire-assisted MWECR-CVD system
He Bin, Chen Guang-Hua, Zhu Xiu-Hong, Zhang Wen-Li, Ding Yi, Ma Zhan-Jie, Gao Zhi-Hua, Song Xue-Mei, Deng Jin-Xiang
2006, 15 (4):
866-871.
doi: 10.1088/1009-1963/15/4/035
Abstract
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PDF (301KB)
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Intrinsic hydrogenated microcrystalline silicon (\muc-Si:H) films have
been prepared by hot-wire-assisted microwave electron-cyclotron-resonance
chemical vapour deposition (HW-MWECR-CVD) under different deposition
conditions. Fourier-transform infrared spectra and Raman spectra were
measured. Optical band gap was determined by Tauc plots, and experiments of
photo-induced degradation were performed. It was observed that hydrogen
dilution plays a more essential role than substrate temperature in
microcrystalline transformation at low temperatures. Crystalline volume
fraction and mean grain size in the films increase with the dilution
ratio (R=H2/(H2+SiH4)).
With the rise of crystallinity in the films, the optical band gap tends to
become narrower while the hydrogen content and photo-induced degradation
decrease dramatically. The samples, were identified as \mu c-Si:H films, by
calculating the optical band gap. It is considered that hydrogen dilution
has an effect on reducing the crystallization activation energy of the
material, which promotes the heterogeneous solid-state phase transition
characterized by the Johnson--Mehl--Avrami (JMA) equation. The films with the
needed structure can be prepared by balancing deposition and crystallization
through controlling process parameters.
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