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Effects of TMIn flow rate during quantum barrier growth on multi-quantum well material properties and device performance of GaN-based laser diodes
Zhenyu Chen(陈振宇), Degang Zhao(赵德刚), Feng Liang(梁锋), Zongshun Liu(刘宗顺), Jing Yang(杨静), and Ping Chen(陈平)
Chin. Phys. B . 2024, (
12
): 128102 -128102 . DOI: 10.1088/1674-1056/ad8624