Chinese Physics B
β-Ga 2O 3 junction barrier Schottky diode with NiO p-well floating field rings
Qiming He(何启鸣), Weibing Hao(郝伟兵), Qiuyan Li(李秋艳), Zhao Han(韩照), Song He(贺松),Qi Liu(刘琦), Xuanze Zhou(周选择), Guangwei Xu(徐光伟), and Shibing Long(龙世兵)
Chin. Phys. B . 2023, (12): 128507 -128507 .  DOI: 10.1088/1674-1056/accf69

Authors
  • Submit an article
  • Manuscript tracking
  • Call for papers
  • Scope
  • Instruction for authors
  • Copyright agreement
  • Templates
  • PACS
  • Flow chart
  • Author FAQs
    • Referees
  • Review policy
  • Referee login
  • Referee FAQs
  • Editor in chief login
  • Editor login
  • Office login
    • Browse
  • In press
  • Current issue
  • Previous issues
  • Special topics
  • Author index
  • Highlights
  • Annual highlights
  • View by fields
  • Top downloaded
  • SCI top cited
    • About
  • About CPB
  • Editorial board
  • Editorial Board of Young Scientists
  • SCI IF
  • Staff
  • Contact us
    • Copyright © Editorial Office of Chinese Physics B, All Rights Reserved.
    • Tel: 010-82649026   Fax: 010-82649027   E-mail: cpb@aphy.iphy.ac.cn
    • Sponsored by Institute of Physics, CAS & Chinese Physical Society
      Collaborating with IOP Publishing, UK in distribution