Chinese Physics B
Modeling of tunneling current in ultrathin MOS structure with interface trap charge and fixed oxide charge
Hu Bo (胡波), Huang Shi-Hua (黄仕华), Wu Feng-Min (吴锋民)
Chin. Phys. B . 2013, (1): 17301 -017301 .  DOI: 10.1088/1674-1056/22/1/017301

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