Analysis of the breakdown mechanism for an ultra high voltage high-side thin layer silicon-on-insulator p-channel lateral double-diﬀused metal oxide semiconductor

Analysis of the breakdown mechanism for an ultra high voltage high-side thin layer silicon-on-insulator p-channel lateral double-diﬀused metal oxide semiconductor

Zhuang Xiang(庄翔), Qiao Ming(乔明), Zhang Bo(张波), and Li Zhao-Ji(李肇基)

Chin. Phys. B . 2012, (3): 37305 -037305 . DOI: 10.1088/1674-1056/21/3/037305