|
|
Other articles related with "threshold voltage shift"：
|
|
128502 |
Wei-Tai Gong(巩伟泰), Yan Li(李闫), Ya-Bin Sun(孙亚宾), Yan-Ling Shi(石艳玲), and Xiao-Jin Li(李小进) |
| |
|
Investigation of degradation and recovery characteristics of NBTI in 28-nm high-k metal gate process |
| |
|
|
Chin. Phys. B
2023 Vol.32 (12): 128502-128502
[Abstract]
(127)
[HTML 0 KB]
[PDF 823 KB]
(38)
|
|
|
18506 |
Guangbao Lu(陆广宝), Jun Liu(刘俊), Chuanguo Zhang(张传国), Yang Gao(高扬), and Yonggang Li(李永钢) |
| |
|
Dynamic modeling of total ionizing dose-induced threshold voltage shifts in MOS devices |
| |
|
|
Chin. Phys. B
2023 Vol.32 (1): 18506-018506
[Abstract]
(411)
[HTML 1 KB]
[PDF 683 KB]
(165)
|
|
|
96101 |
Chen Wang(王琛), Wenmo Lu(路文墨), Fengnan Li(李奉南), Qiaomei Luo(罗巧梅), and Fei Ma(马飞)† |
| |
|
Migration of weakly bonded oxygen atoms in a-IGZO thin films and the positive shift of threshold voltage in TFTs |
| |
|
|
Chin. Phys. B
2022 Vol.31 (9): 96101-096101
[Abstract]
(344)
[HTML 0 KB]
[PDF 5583 KB]
(162)
|
|
|
17303 |
Dong Zhang(张东), Chenfei Wu(武辰飞), Weizong Xu(徐尉宗), Fangfang Ren(任芳芳), Dong Zhou(周东), Peng Yu(于芃), Rong Zhang(张荣), Youdou Zheng(郑有炓), Hai Lu(陆海) |
| |
|
Investigation and active suppression of self-heating induced degradation in amorphous InGaZnO thin film transistors |
| |
|
|
Chin. Phys. B
2019 Vol.28 (1): 17303-017303
[Abstract]
(758)
[HTML 1 KB]
[PDF 528 KB]
(208)
|
|
|
565 |
Zheng Zhong-Shan (郑中山), Liu Zhong-Li (刘忠立), Zhang Guo-Qiang (张国强), Li Ning (李宁), Fan Kai (范楷), Zhang En-Xia (张恩霞), Yi Wan-Bing (易万兵), Chen Meng (陈猛), Wang Xi (王曦) |
| |
|
Effect of the technology of implanting nitrogen into buried oxide on the radiation hardness of the top gate oxide for partially depleted SOI PMOSFET |
| |
|
|
Chin. Phys. B
2005 Vol.14 (3): 565-570
[Abstract]
(1294)
[HTML 1 KB]
[PDF 279 KB]
(970)
|
| First page | Previous Page | Next Page | Last Page | Page 1 of 1 |
|
|
