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P-type cold-source field-effect transistors with TcX2 and ReX2 (X=S, Se) cold source electrodes: A computational study |
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118102 |
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97401 |
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Tunneling field effect transistors based on in-plane and vertical layered phosphorus heterostructures |
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108502 |
Yun-He Guan(关云鹤), Zun-Chao Li(李尊朝), Dong-Xu Luo(骆东旭), Qing-Zhi Meng(孟庆之), Ye-Fei Zhang(张也非) |
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Characteristics of cylindrical surrounding-gate GaAsxSb1-x/InyGa1-yAs heterojunction tunneling field-effect transistors |
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37303 |
Fan Min-Min (范敏敏), Xu Jing-Ping (徐静平), Liu Lu (刘璐), Bai Yu-Rong (白玉蓉), Huang Yong (黄勇) |
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Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor |
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38501 |
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Two-dimensional threshold voltage model of nanoscale silicon-on-insulator tunneling field-effect transistor |
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