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Other articles related with "resonant tunneling diode"：
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127301 |
Xiang-Peng Zhou(周祥鹏), Hai-Bing Qiu(邱海兵), Wen-Xian Yang(杨文献), Shu-Long Lu(陆书龙), Xue Zhang(张雪), Shan Jin(金山), Xue-Fei Li(李雪飞), Li-Feng Bian(边历峰), and Hua Qin(秦华) |
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Comparison of resonant tunneling diodes grown on freestanding GaN substrates and sapphire substrates by plasma-assisted molecular-beam epitaxy |
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Chin. Phys. B
2021 Vol.30 (12): 127301-127301
[Abstract]
(542)
[HTML 0 KB]
[PDF 1807 KB]
(80)
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67304 |
Dakhlaoui H, Almansour S |
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Piezoelectric polarization and quantum size effects on the vertical transport in AlGaN/GaN resonant tunneling diodes |
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Chin. Phys. B
2016 Vol.25 (6): 67304-067304
[Abstract]
(722)
[HTML 1 KB]
[PDF 305 KB]
(270)
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4645 |
Zhang Yang (张杨), Zhang Yu (张予), Zeng Yi-Ping (曾一平) |
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Dependence of current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes on quantum well widths |
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Chin. Phys. B
2008 Vol.17 (12): 4645-4647
[Abstract]
(1484)
[HTML 1 KB]
[PDF 1208 KB]
(680)
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