Other articles related with "negative capacitance (NC)":
97301 Weijie Wei(魏伟杰), Weifeng Lü(吕伟锋), Ying Han(韩颖), Caiyun Zhang(张彩云), and Dengke Chen(谌登科)
  Design optimization of a silicon-germanium heterojunction negative capacitance gate-all-around tunneling field effect transistor based on a simulation study
    Chin. Phys. B   2023 Vol.32 (9): 97301-097301 [Abstract] (170) [HTML 1 KB] [PDF 2753 KB] (79)
127701 Yuan-Yuan Zhang(张元元), Xiao-Qing Sun(孙晓清), Jun-Shuai Chai(柴俊帅), Hao Xu(徐昊), Xue-Li Ma(马雪丽), Jin-Juan Xiang(项金娟), Kai Han(韩锴), Xiao-Lei Wang(王晓磊), and Wen-Wu Wang(王文武)
  Insight into influence of thermodynamic coefficients on transient negative capacitance in Zr-doped HfO2 ferroelectric capacitors
    Chin. Phys. B   2021 Vol.30 (12): 127701-127701 [Abstract] (310) [HTML 0 KB] [PDF 988 KB] (151)
37307 Lie-Feng Feng(冯列峰), Kun Zhao(赵昆), Hai-Tao Dai(戴海涛), Shu-Guo Wang(王树国), Xiao-Wei Sun(孙小卫)
  Charge recombination mechanism to explain the negative capacitance in dye-sensitized solar cells
    Chin. Phys. B   2016 Vol.25 (3): 37307-037307 [Abstract] (628) [HTML 0 KB] [PDF 331 KB] (464)
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