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Other articles related with "minority carrier lifetime"：
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76106 |
Jia-Nan Wei(魏佳男), Chao-Hui He(贺朝会), Pei Li(李培), Yong-Hong Li(李永宏), Hong-Xia Guo(郭红霞) |
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Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor |
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Chin. Phys. B
2019 Vol.28 (7): 76106-076106
[Abstract]
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98103 |
Cai-Xia Hou(侯彩霞), Xin-He Zheng(郑新和), Rui Jia(贾锐), Ke Tao(陶科), San-Jie Liu(刘三姐), Shuai Jiang(姜帅), Peng-Fei Zhang(张鹏飞), Heng-Chao Sun(孙恒超), Yong-Tao Li(李永涛) |
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Crystalline silicon surface passivation investigated by thermal atomic-layer-deposited aluminum oxide |
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Chin. Phys. B
2017 Vol.26 (9): 98103-098103
[Abstract]
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86201 |
Li-Ying Tan(谭立英), Fa-Jun Li(黎发军), Xiao-Long Xie(谢小龙), Yan-Ping Zhou(周彦平), Jing Ma(马晶) |
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Study on irradiation-induced defects in GaAs/AlGaAs core-shell nanowires via photoluminescence technique |
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Chin. Phys. B
2017 Vol.26 (8): 86201-086201
[Abstract]
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45201 |
Ming Gao(高明), Hui-Wei Du(杜汇伟), Jie Yang(杨洁), Lei Zhao(赵磊), Jing Xu(徐静), Zhong-Quan Ma(马忠权) |
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Variation of passivation behavior induced by sputtered energetic particles and thermal annealing for ITO/SiOx/Si system |
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Chin. Phys. B
2017 Vol.26 (4): 45201-045201
[Abstract]
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