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Other articles related with "gate-all-around (GAA)"：
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107310 |
Pranav Agarwal, Sankalp Rai, Rakshit Y. A, and Varun Mishra |
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Design and investigation of doping-less gate-all-around TFET with Mg2Si source material for low power and enhanced performance applications |
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Chin. Phys. B
2023 Vol.32 (10): 107310-107310
[Abstract]
(107)
[HTML 1 KB]
[PDF 11989 KB]
(52)
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97301 |
Weijie Wei(魏伟杰), Weifeng Lü(吕伟锋), Ying Han(韩颖), Caiyun Zhang(张彩云), and Dengke Chen(谌登科) |
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Design optimization of a silicon-germanium heterojunction negative capacitance gate-all-around tunneling field effect transistor based on a simulation study |
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Chin. Phys. B
2023 Vol.32 (9): 97301-097301
[Abstract]
(164)
[HTML 1 KB]
[PDF 2753 KB]
(76)
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78502 |
Wen-Hao Zhang(张文豪), Zun-Chao Li(李尊朝), Yun-He Guan(关云鹤), Ye-Fei Zhang(张也非) |
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Double-gate-all-around tunnel field-effect transistor |
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Chin. Phys. B
2017 Vol.26 (7): 78502-078502
[Abstract]
(623)
[HTML 1 KB]
[PDF 429 KB]
(214)
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