Other articles related with "gate metal height":
27301 Zhong-Xu Wang(王中旭), Lin Du(杜林), Jun-Wei Liu(刘俊伟), Ying Wang(王颖), Yun Jiang(江芸), Si-Wei Ji(季思蔚), Shi-Wei Dong(董士伟), Wei-Wei Chen(陈伟伟), Xiao-Hong Tan(谭骁洪), Jin-Long Li(李金龙), Xiao-Jun Li(李小军), Sheng-Lei Zhao(赵胜雷), Jin-Cheng Zhang(张进成), Yue Hao(郝跃)
  Breakdown voltage enhancement in GaN channel and AlGaN channel HEMTs using large gate metal height
    Chin. Phys. B   2020 Vol.29 (2): 27301-027301 [Abstract] (1092) [HTML 1 KB] [PDF 847 KB] (303)
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