Other articles related with "dual-active-layer":
87302 Wenxing Huo(霍文星), Zengxia Mei(梅增霞), Yicheng Lu(卢毅成), Zuyin Han(韩祖银), Rui Zhu(朱锐), Tao Wang(王涛), Yanxin Sui(隋妍心), Huili Liang(梁会力), Xiaolong Du(杜小龙)
  Effects of active layer thickness on performance and stability of dual-active-layer amorphous InGaZnO thin-film transistors
    Chin. Phys. B   2019 Vol.28 (8): 87302-087302 [Abstract] (600) [HTML 1 KB] [PDF 1824 KB] (157)
88503 Yu-Rong Liu(刘玉荣), Gao-Wei Zhao(赵高位), Pai-To Lai(黎沛涛), Ruo-He Yao(姚若河)
  Improvement in the electrical performance and bias-stress stability of dual-active-layered silicon zinc oxide/zinc oxide thin-film transistor
    Chin. Phys. B   2016 Vol.25 (8): 88503-088503 [Abstract] (639) [HTML 1 KB] [PDF 1344 KB] (552)
First page | Previous Page | Next Page | Last PagePage 1 of 1