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Other articles related with "amorphous indium-gallium-zinc oxide"：
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118101 |
Yalan Wang(王雅兰), Mingxiang Wang(王明湘), Dongli Zhang(张冬利), and Huaisheng Wang(王槐生) |
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A systematic study of light dependency of persistent photoconductivity in a-InGaZnO thin-film transistors |
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Chin. Phys. B
2020 Vol.29 (11): 118101-
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128101 |
Dong-Yu Qi(齐栋宇), Dong-Li Zhang(张冬利), Ming-Xiang Wang(王明湘) |
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Positive gate bias stress-induced hump-effect in elevated-metal metal-oxide thin film transistors |
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Chin. Phys. B
2017 Vol.26 (12): 128101-128101
[Abstract]
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