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Other articles related with "a-IGZO"：
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18503 |
Wen Xiong(熊文), Jing-Yong Huo(霍景永), Xiao-Han Wu(吴小晗), Wen-Jun Liu(刘文军),David Wei Zhang(张卫), and Shi-Jin Ding(丁士进) |
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High-performance amorphous In-Ga-Zn-O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO2 heterojunction charge trapping stack |
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Chin. Phys. B
2023 Vol.32 (1): 18503-018503
[Abstract]
(228)
[HTML 0 KB]
[PDF 1005 KB]
(59)
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96101 |
Chen Wang(王琛), Wenmo Lu(路文墨), Fengnan Li(李奉南), Qiaomei Luo(罗巧梅), and Fei Ma(马飞)† |
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Migration of weakly bonded oxygen atoms in a-IGZO thin films and the positive shift of threshold voltage in TFTs |
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Chin. Phys. B
2022 Vol.31 (9): 96101-096101
[Abstract]
(309)
[HTML 0 KB]
[PDF 5583 KB]
(144)
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88101 |
Tianyuan Song(宋天源), Dongli Zhang(张冬利), Mingxiang Wang(王明湘), and Qi Shan(单奇) |
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Degradation mechanisms for a-InGaZnO thin-film transistors functioning under simultaneous DC gate and drain biases |
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Chin. Phys. B
2022 Vol.31 (8): 88101-088101
[Abstract]
(343)
[HTML 1 KB]
[PDF 813 KB]
(105)
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78503 |
Mei-Na Zhang(张美娜), Yan Shao(邵龑), Xiao-Lin Wang(王晓琳), Xiaohan Wu(吴小晗), Wen-Jun Liu(刘文军), Shi-Jin Ding(丁士进) |
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Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels |
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Chin. Phys. B
2020 Vol.29 (7): 78503-078503
[Abstract]
(558)
[HTML 0 KB]
[PDF 945 KB]
(117)
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88503 |
Mei-Na Zhang(张美娜), Yan Shao(邵龑), Xiao-Lin Wang(王晓琳), Xiaohan Wu(吴小晗), Wen-Jun Liu(刘文军), Shi-Jin Ding(丁士进) |
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Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels |
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Chin. Phys. B
0 Vol. (): 88503-088503
[Abstract]
(89)
[HTML 0 KB]
[PDF 818 KB]
(87)
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