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Other articles related with "MOS capacitor"：
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117302 |
Zhi-Peng Yin(尹志鹏), Sheng-Sheng Wei(尉升升), Jiao Bai(白娇), Wei-Wei Xie(谢威威), Zhao-Hui Liu(刘兆慧), Fu-Wen Qin(秦福文), and De-Jun Wang(王德君) |
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Ozone oxidation of 4H-SiC and flat-band voltage stability of SiC MOS capacitors |
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Chin. Phys. B
2022 Vol.31 (11): 117302-117302
[Abstract]
(303)
[HTML 1 KB]
[PDF 1551 KB]
(107)
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48504 |
Xi-Ming Chen(陈喜明), Bang-Bing Shi(石帮兵), Xuan Li(李轩), Huai-Yun Fan(范怀云), Chen-Zhan Li(李诚瞻), Xiao-Chuan Deng(邓小川), Hai-Hui Luo(罗海辉), Yu-Dong Wu(吴煜东), and Bo Zhang(张波) |
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Characteristics and mechanisms of subthreshold voltage hysteresis in 4H-SiC MOSFETs |
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Chin. Phys. B
2021 Vol.30 (4): 48504-
[Abstract]
(458)
[HTML 1 KB]
[PDF 790 KB]
(154)
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118502 |
Han-Han Lu(卢汉汉), Jing-Ping Xu(徐静平), Lu Liu(刘璐), Pui-To Lai(黎沛涛), Wing-Man Tang(邓咏雯) |
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Equivalent distributed capacitance model of oxide traps onfrequency dispersion of C-V curve for MOS capacitors |
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Chin. Phys. B
2016 Vol.25 (11): 118502-118502
[Abstract]
(553)
[HTML 0 KB]
[PDF 1483 KB]
(380)
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38103 |
Jia Ren-Xu (贾仁需), Dong Lin-Peng (董林鹏), Niu Ying-Xi (钮应喜), Li Cheng-Zhan (李诚瞻), Song Qing-Wen (宋庆文), Tang Xiao-Yan (汤晓燕), Yang Fei (杨霏), Zhang Yu-Ming (张玉明) |
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Energy-band alignment of atomic layer deposited (HfO2)x(Al2O3)1-x gate dielectrics on 4H-SiC |
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Chin. Phys. B
2015 Vol.24 (3): 38103-038103
[Abstract]
(763)
[HTML 0 KB]
[PDF 347 KB]
(391)
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47303 |
H. M. Baran, A. Tataroğlu |
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Determination of interface states and their time constant for Au/SnO2/n-Si (MOS) capacitors using admittance measurements |
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Chin. Phys. B
2013 Vol.22 (4): 47303-047303
[Abstract]
(655)
[HTML 1 KB]
[PDF 884 KB]
(1911)
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2197 |
Wang Lian(王莲), Song Chong-Fu(宋崇富), Sun Jian-Qiu(孙剑秋), Hou Ying(侯莹), Li Xiao-Guang(李晓光), and Li Quan-Xin(李全新) |
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Oxidation of silicon surface with atomic oxygen radical anions |
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Chin. Phys. B
2008 Vol.17 (6): 2197-2203
[Abstract]
(1668)
[HTML 1 KB]
[PDF 507 KB]
(614)
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529 |
Xu Jing-Ping(徐静平), Chen Wei-Bing(陈卫兵), Lai Pui-To(黎沛涛), Li Yan-Ping(李艳萍), and Chan Chu-Lok(陈铸略) |
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Electrical properties and reliability of HfO2 gate-dielectric MOS capacitors with trichloroethylene surface pretreatment |
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Chin. Phys. B
2007 Vol.16 (2): 529-532
[Abstract]
(1485)
[HTML 1 KB]
[PDF 147 KB]
(501)
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