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Other articles related with "InGaN/GaN multiple quantum wells"：
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17805 |
Xiang Li(李翔), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Jing Yang(杨静), Ping Chen(陈平), Zong-Shun Liu(刘宗顺), Jian-Jun Zhu(朱建军), Wei Liu(刘炜), Xiao-Guang He(何晓光), Xiao-Jing Li(李晓静), Feng Liang(梁锋), Jian-Ping Liu(刘建平), Li-Qun Zhang(张立群), Hui Yang(杨辉), Yuan-Tao Zhang(张源涛), Guo-Tong Du(杜国同), Heng Long(龙衡), Mo Li(李沫) |
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Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths |
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Chin. Phys. B
2017 Vol.26 (1): 17805-017805
[Abstract]
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[HTML 1 KB]
[PDF 308 KB]
(334)
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127801 |
Liu Wei (刘炜), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Chen Ping (陈平), Liu Zong-Shun (刘宗顺), Zhu Jian-Jun (朱建军), Li Xiang (李翔), Liang Feng (梁锋), Liu Jian-Ping (刘建平), Yang Hui (杨辉) |
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Variation of efficiency droop with quantum well thickness in InGaN/GaN green light-emitting diode |
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Chin. Phys. B
2015 Vol.24 (12): 127801-127801
[Abstract]
(872)
[HTML 1 KB]
[PDF 1354 KB]
(454)
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54211 |
Liang Ming-Ming (梁明明), Weng Guo-En (翁国恩), Zhang Jiang-Yong (张江勇), Cai Xiao-Mei (蔡晓梅), Lü Xue-Qin (吕雪芹), Ying Lei-Ying (应磊莹), Zhang Bao-Ping (张保平) |
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Influence of barrier thickness on the structural and optical properties of InGaN/GaN multiple quantum wells |
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Chin. Phys. B
2014 Vol.23 (5): 54211-054211
[Abstract]
(830)
[HTML 1 KB]
[PDF 446 KB]
(619)
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88401 |
Zhao Bi-Jun (赵璧君), Chen Xin (陈鑫), Ren Zhi-Wei (任志伟), Tong Jin-Hui (童金辉), Wang Xing-Fu (王幸福), Li Dan-Wei (李丹伟), Zhuo Xiang-Jing (卓祥景), Zhang Jun (章俊), Yi Han-Xiang (易翰翔), Li Shu-Ti (李述体) |
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Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content |
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Chin. Phys. B
2013 Vol.22 (8): 88401-088401
[Abstract]
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[HTML 1 KB]
[PDF 421 KB]
(695)
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