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Other articles related with "InAlGaN"：
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18102 |
Ya-Chao Zhang(张雅超), Zhi-Zhe Wang(王之哲), Rui Guo(郭蕊), Ge Liu(刘鸽), Wei-Min Bao(包为民), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
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High-performance InAlGaN/GaN enhancement-mode MOS-HEMTs grown by pulsed metal organic chemical vapor deposition |
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Chin. Phys. B
2019 Vol.28 (1): 18102-018102
[Abstract]
(609)
[HTML 1 KB]
[PDF 1276 KB]
(164)
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28502 |
Yu Xiao-Peng (喻晓鹏), Fan Guang-Han (范广涵), Ding Bin-Bin (丁彬彬), Xiong Jian-Yong (熊建勇), Xiao Yao (肖瑶), Zhang Tao (张涛), Zheng Shu-Wen (郑树文) |
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Performance improvement of GaN-based light-emitting diode with a p-InAlGaN hole injection layer |
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Chin. Phys. B
2014 Vol.23 (2): 28502-028502
[Abstract]
(595)
[HTML 1 KB]
[PDF 947 KB]
(1337)
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