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Other articles related with "GaN high-electron-mobility transistor switch":
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117301 |
Miao Geng(耿苗), Pei-Xian Li(李培咸), Wei-Jun Luo(罗卫军), Peng-Peng Sun(孙朋朋), Rong Zhang(张蓉), Xiao-Hua Ma(马晓华) |
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Small-signal modeling of GaN HEMT switch with a new intrinsic elements extraction method |
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Chin. Phys. B
2016 Vol.25 (11): 117301-117301
[Abstract]
(803)
[HTML 1 KB]
[PDF 1091 KB]
(1226)
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