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Other articles related with "GGNMOS"：
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78501 |
Jia-Xin Wang(王加鑫), Xiao-Jing Li(李晓静), Fa-Zhan Zhao(赵发展), Chuan-Bin Zeng(曾传滨), Duo-Li Li(李多力), Lin-Chun Gao(高林春), Jiang-Jiang Li(李江江), Bo Li(李博), Zheng-Sheng Han(韩郑生), and Jia-Jun Luo(罗家俊) |
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Trigger mechanism of PDSOI NMOS devices for ESD protection operating under elevated temperatures |
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Chin. Phys. B
2021 Vol.30 (7): 78501-078501
[Abstract]
(512)
[HTML 1 KB]
[PDF 1734 KB]
(62)
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88501 |
Fei Hou(侯飞), Ruibo Chen(陈瑞博), Feibo Du(杜飞波), Jizhi Liu(刘继芝), Zhiwei Liu(刘志伟), Juin J Liou(刘俊杰) |
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Improving robustness of GGNMOS with P-base layer for electrostatic discharge protection in 0.5-μm BCD process |
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Chin. Phys. B
2019 Vol.28 (8): 88501-088501
[Abstract]
(648)
[HTML 1 KB]
[PDF 1117 KB]
(203)
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