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Other articles related with "FeFET"：
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87701 |
Xiaoqing Sun(孙晓清), Hao Xu(徐昊), Junshuai Chai(柴俊帅), Xiaolei Wang(王晓磊), and Wenwu Wang(王文武) |
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Charge trapping effect at the interface of ferroelectric/interlayer in the ferroelectric field effect transistor gate stack |
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Chin. Phys. B
2023 Vol.32 (8): 87701-087701
[Abstract]
(139)
[HTML 1 KB]
[PDF 716 KB]
(307)
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37106 |
Jianlu Wang(王建禄), Weida Hu(胡伟达) |
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Recent progress on integrating two-dimensional materials with ferroelectrics for memory devices and photodetectors |
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Chin. Phys. B
2017 Vol.26 (3): 37106-037106
[Abstract]
(797)
[HTML 1 KB]
[PDF 3372 KB]
(1111)
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46104 |
Yan Shao-An (燕少安), Tang Ming-Hua (唐明华), Zhao Wen (赵雯), Guo Hong-Xia (郭红霞), Zhang Wan-Li (张万里), Xu Xin-Yu (徐新宇), Wang Xu-Dong (王旭东), Ding Hao (丁浩), Chen Jian-Wei (陈建伟), Li Zheng (李正), Zhou Yi-Chun (周益春) |
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Single event effect in a ferroelectric-gate field-effect transistor under heavy-ion irradiation |
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Chin. Phys. B
2014 Vol.23 (4): 46104-046104
[Abstract]
(777)
[HTML 1 KB]
[PDF 756 KB]
(517)
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Single Event Effect in Ferroelectric-Gate FET under Heavy-Ion Irradiation |
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Chin. Phys. B
Vol. (): 0-0
[Abstract]
(53)
[HTML 0 KB]
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(6)
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