Designing current-strain-assisted superconductor-ferromagnet multi-bit memories

doi:10.1088/1674-1056/ac7e36

Abstract Current superconducting memory devices lack the basic quality of high memory density for practical memories, mainly due to the size limitations of superconducting quantum interference devices. Here, we propose a superconductor-ferromagnet bilayer device with strain-pulse-assisted multi-bit ladder-type memory, by using strain-engineered ferromagnet domain structure to control carrier concentration in the superconductor, which is simulated by coupled Landau-Lifshitz-Gilbert and Ginzburg-Landau equations. Current- and strain-pulses are observed to deterministically control the resistivity of superconductor for one and two-bit device arrangements. The average carrier concentration of superconductor is observed to have multiple metastable states that can be controllably switched using current-pulse and strain-pulse to determine multiple resistivity states. These findings confirm the eligibility of superconductor-ferromagnet bilayers to be used as ladder-type multibit memories and open a new way for further theoretical and experimental investigations of the cryogenic memories.

Keywords: superconductor-ferromagnet bilayer cryogenic memories superconducting memories vortex memories

Received: 14 March 2022
Revised: 30 June 2022
Accepted manuscript online: 05 July 2022

PACS:	74.20.De	(Phenomenological theories (two-fluid, Ginzburg-Landau, etc.))
	74.25.Uv	(Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses))
	74.78.-w	(Superconducting films and low-dimensional structures)
	74.78.Fk	(Multilayers, superlattices, heterostructures)

Fund: Project sponsored by the National Natural Science Foundation of China (Grant Nos. 52150410420 and 51972028) and the National Key Research and Development Program of China (Grant No. 2019YFA0307900).

Corresponding Authors: Hou-Bing Huang
E-mail: hbhuang@bit.edu.cn

Cite this article:

Hasnain Mehdi Jafri, Jing Wang(王静), Xiao-Ming Shi(施小明), De-Shan Liang(梁德山), and Hou-Bing Huang(黄厚兵) Designing current-strain-assisted superconductor-ferromagnet multi-bit memories 2022 Chin. Phys. B 31 118501

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[1]	Phase-field simulation of superconductor vortex clustering in the vicinity of ferromagnetic domain bifurcations Hasnain Mehdi Jafri, Jing Wang(王静), Chao Yang(杨超), Jun-Sheng Wang(王俊升), and Hou-Bing Huang(黄厚兵). Chin. Phys. B, 2020, 29(12): 127402.

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Designing current-strain-assisted superconductor-ferromagnet multi-bit memories

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