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A theoretical investigation of glide dislocations in BN/AlN heterojunctions |
| Shujun Zhang(张淑君)† |
| Department of Physics, Chongqing Three Gorges University, Wanzhou 404100, China |
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Abstract Glide dislocations with periodic pentagon-heptagon pairs are investigated within the theory of one-dimensional misfit dislocations in the framework of an improved Peierls-Nabarro (P-N) equation in which the lattice discreteness is fully considered. We find an approximate solution to handle misfit dislocations, where the second-order derivative appears in the improved P-N equation. This result is practical for periodic glide dislocations with narrow width, and those in the BN/AlN heterojunction are studied. The structure of the misfit dislocations and adhesion work are obtained explicitly and verified by first-principles calculations. Compared with shuffle dislocations, the compression force in the tangential direction of glide dislocations has a greater impact on the normal direction, and the contributions of the normal displacement to the interfacial energy cannot simply be ignored.
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Received: 17 May 2022
Revised: 11 July 2022
Accepted manuscript online: 13 July 2022
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PACS:
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61.72.Bb
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(Theories and models of crystal defects)
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68.35.Dv
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(Composition, segregation; defects and impurities)
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68.55.Ln
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(Defects and impurities: doping, implantation, distribution, concentration, etc.)
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Corresponding Authors:
Shujun Zhang
E-mail: shjzhang@sanxiau.edu.cn
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Cite this article:
Shujun Zhang(张淑君) A theoretical investigation of glide dislocations in BN/AlN heterojunctions 2022 Chin. Phys. B 31 116101
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