Micro-pinch formation and extreme ultraviolet emission of laser-induced discharge plasma
Jun-Wu Wang(王均武)1, Xin-Bing Wang(王新兵)1,†, Du-Luo Zuo(左都罗)1, and Vassily S. Zakharov2
1 Wuhan National Research Center for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China; 2 Keldysh Institute of Applied Mathematics, Russian Academy of Sciences, Moscow, Russia
Abstract Extreme ultraviolet (EUV) source produced by laser-induced discharge plasma (LDP) is a potential technical means in inspection and metrology. A pulsed Nd:YAG laser is focused on a tin plate to produce an initial plasma thereby triggering a discharge between high-voltage electrodes in a vacuum system. The process of micro-pinch formation during the current rising is recorded by a time-resolved intensified charge couple device camera. The evolution of electron temperature and density of LDP are obtained by optical emission spectrometry. An extreme ultraviolet spectrometer is built up to investigate the EUV spectrum of Sn LDP at 13.5 nm. The laser and discharge parameters such as laser energy, voltage, gap distance, and anode shape can influence the EUV emission.
Fund: Project supported by the Basic and Applied Basic Research Major Program of Guangdong Province, China (Grant No. 2019B030302003).
Corresponding Authors:
Xin-Bing Wang
E-mail: xbwang@hust.edu.cn
Cite this article:
Jun-Wu Wang(王均武), Xin-Bing Wang(王新兵), Du-Luo Zuo(左都罗), and Vassily S. Zakharov Micro-pinch formation and extreme ultraviolet emission of laser-induced discharge plasma 2021 Chin. Phys. B 30 095207
[1] Wooda O, Koay C S, et al. 2015 SPIE Advanced Lithography, February 22, 2015, San Jose, California, USA, 9422:94220R [2] Kerkhof M, Jasper H, et al. 2017 SPIE Advanced Lithography, March 24, 2017, San Jose, California, USA, 101430D [3] Pirati A, Schoot Jan van, et al. 2017 Extreme Ultraviolet (EUV) Lithography VⅢ International Society for Optics and Photonics, March 27, 2017, San Jose, California, USA, 101430G [4] Endo A 2015 Conference on Lasers and Electro-Optics, May 10-15, 2015, San Jose, CA, USA, ATu4M.5 [5] Teramoto Y, et al. 2014 Proc. SPIE Extreme Ultraviolet (EUV) Lithography V, April 17, 2014, San Jose, California, USA, 904813, pp. 287-294 [6] Benk M, Bergmann K, et al. 2012 J. Micro/Nanolith. MEMS MOEMS11 21106 [7] Stamm U, Mackay R S, Kleinschmidt J, et al. 2005 Proceedings of SPIE - The International Society for Optical Engineering, May 6, 2005, San Jose, California, USA, 5751 pp. 829-839 [8] Vinokhodov A Y, Krivokorytov M S, Sidelnikov Y V, et al. 2016 J. Appl. Phys.120 163304 [9] Tobin I, Juschkin L, Sidelnikov Y, et al.. 2013 Appl. Phys. Lett.102 203504 [10] Jonkers J 2006 Plasma Sources Science and Technology15 S8 [11] Beyene G A, Tobin I and Juschkin L 2016 J. Phys. D: Appl. Phys.49 225201 [12] Schriever G, Semprez O, Jonkers J, et al. 2012 J. MicroNanolith. MEMS MOEMS11 021104 [13] Teramoto Y, Santos B, Mertens G, et al. 2016 SPIE Advanced Lithography VⅡ, March 18, 2016, San Jose, California, USA, 97 [14] Tobin I 2014 “Optical and EUV studies of laser triggered Z-pinch discharges”, Ph. D. Dissertation (Dublin, Ireland: School of Physics, Trinity College) [15] Moorti A and Rao B S 2006 IEEE Trans. Plasma Sci.34 2419 [16] Xie Z, Wu J Z, Dou Y P, et al.. 2019 AIP Adv.9 085029 [17] Tsygvintsev I P, Krukovskiy A Y and Gasilov V A 2016 Math. Model. Comput. Simul.8 595 [18] Xie Z, Wu J Z, Dou Y P, et al.. 2018 J. Appl. Phys.124 213303 [19] Korobkin Yu V, Paperny V L and Romanov I V 2008 Plasma Phys. Control. Fusion50 065002 [20] Romanov I V, V Korobkin Yu V and Paperny V L 2016 Phys. Plasmas23 023112 [21] Zhu Q S, Yamada J, Kishi N, et al. 2011 J. Phys. D: Appl. Phys.44 145203 [22] Watanabe M, Yamada J, Zhu Q S and Hotta E 2009 AIP Conf. Proc.1088 188 [23] Lim S, Kamohara T, Hosseini S H R, et al. 2016 J. Phys. D: Appl. Phys.49 295207 [24] Zhu Q, Muto T, Yamada J, et al. 2011 J. Appl. Phys. D110 123302 [25] Kieft E R, van der Mullen J J A M and Kroesen G M W 2004 Phys. Rev. E70 066402 [26] Zollweg R J and Liebermann R W 1987 J. Appl. Phys.62 3621 [27] Colombant D, Tonon G F, et al. 1973 J. Appl. Phys.44 3524 [28] O'Sullivan G, Li B, et al. 2015 J. Phys. B: At. Mol. Opt. Phys.48 144025 [29] Zverev E A, Krasov V I and Krinberg I A 2005 Plasma Phys. Rep.31 843 [30] Romanov I V, Tsygvintsev I P and Paperny V L 2018 Phys. Plasmas25 083107 [31] Korobkin Yu V, Paperny V L and Romanov I V 2008 Phys. Lett. A372 1292 [32] Lu P, Kitajima S and Lim S 2013 19th IEEE Pulsed Power Conference (PPC), December 4, 2013, San Francisco, CA, USA, pp. 1-4 [33] Hasegawa J, Nakajima M and Horioka K. 1998 Jpn. J. Appl. Phys.37 3530 [34] Alkhimova M A, Vovchenko E D and Melekhov A P 2015 Nukleonika60 221 [35] Vovchenko E D and Melekhov A P 2016 J. Phys.: Conf. Ser.737 012013 [36] Korobkin Yu V, Romanov I V and Rupasov A A 2005 Technical Physics50 1139
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.