Influence of low-temperature sulfidation on the structure of ZnS thin films

doi:10.1088/1674-1056/28/2/024214

Abstract

ZnS thin films were prepared by sulfuring zinc thin films at different sulfuration temperatures. The crystal structure, surface morphology, defects, and optical properties of the thin films were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), positron annihilation Doppler broadening, and UV-Vis spectrophotometer, respectively. It was found that the (200)-plane preferred orientation of the ZnS thin films changed to (111)-plane with increasing sulfidation temperature. Moreover, a number of large holes were generated at 420℃ and eliminated at 440℃. The concentration of defects was lowest when the sulfuration temperature was 440℃. The optical transmission of all samples was maintained at 60%-80% in the wavelength range of 400 nm-800 nm, and the band energy of the ZnS thin films was approximately 3.5 eV for all treatment temperatures except 430℃.

Keywords: ZnS thin films low-temperature sulfidation Doppler broadening measurements

Received: 10 October 2018
Revised: 02 December 2018
Accepted manuscript online:

PACS:	42.70.Km	(Infrared transmitting materials)
	42.79.Wc	(Optical coatings)
	68.37.-d	(Microscopy of surfaces, interfaces, and thin films)
	81.40.Tv	(Optical and dielectric properties related to treatment conditions)

Fund:

Project supported by the National Natural Science Foundation of China (Grant Nos. 11705212 and 11675188).

Corresponding Authors: Peng Zhang, Rengang Zhang
E-mail: zhangpeng@ihep.ac.cn;zhangrengang@wust.edu.cn

Cite this article:

Shuzhen Chen(陈书真), Ligang Song(宋力刚), Peng Zhang(张鹏), Xingzhong Cao(曹兴忠), Runsheng Yu(于润升), Baoyi Wang(王宝义), Long Wei(魏龙), Rengang Zhang(张仁刚) Influence of low-temperature sulfidation on the structure of ZnS thin films 2019 Chin. Phys. B 28 024214

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Influence of low-temperature sulfidation on the structure of ZnS thin films

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