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Chin. Phys. B, 2016, Vol. 25(7): 078101    DOI: 10.1088/1674-1056/25/7/078101
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Preparation of few-layer graphene-capped boron nanowires and their field emission properties

Yong-Xin Zhang(张永欣)1, Fei Liu(刘飞)2, Cheng-Min Shen(申承民)1, Tian-Zhong Yang(杨天中)1, Jun Li(李军)1, Shao-Zhi Deng(邓少芝)2, Ning-Sheng Xu(许宁生)2, Hong-Jun Gao(高鸿钧)1
1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Microelectronics, Sun Yat-sen University, Guangzhou 510275, China
Abstract  

Large-area boron nanowire (BNW) films were fabricated on the Si(111) substrate by chemical vapor deposition (CVD). The average diameter of the BNWs is about 20 nm, with lengths of 5-10 μm. Then, graphene-capped boron nanowires (GC-BNWs) were obtained by microwave plasma chemical vapor deposition (MPCVD). Characterization by scanning electron microscopy indicates that few-layer graphene covers the surface of the boron nanowires. Field emission measurements of the BNWs and GC-BNW films show that the GC-BNW films have a lower turn-on electric field than the BNW films.

Keywords:  boron nanowires      graphene-capped boron nanowires      field emission properties  
Received:  07 March 2016      Revised:  16 March 2016      Accepted manuscript online: 
PACS:  81.07.Gf (Nanowires)  
  81.05.ue (Graphene)  
  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  85.45.Fd (Field emission displays (FEDs))  
Fund: 

Project supported by the National Basic Research Program of China (Grant No. 2013CB933604), the National Natural Science Foundation of China (Grant No. 51572290), and the Chinese Academy of Sciences (Grant Nos. 1731300500015 and XDB07030100).

Corresponding Authors:  Cheng-Min Shen, Hong-Jun Gao     E-mail:  cmshen@iphy.ac.cn;hjgao@iphy.ac.cn

Cite this article: 

Yong-Xin Zhang(张永欣), Fei Liu(刘飞), Cheng-Min Shen(申承民), Tian-Zhong Yang(杨天中), Jun Li(李军), Shao-Zhi Deng(邓少芝), Ning-Sheng Xu(许宁生), Hong-Jun Gao(高鸿钧) Preparation of few-layer graphene-capped boron nanowires and their field emission properties 2016 Chin. Phys. B 25 078101

[1] Otten C J, Lourie O R, Yu M F, Cowley J M, Dyer M J, Ruoff R S and Buhro W E 2002 J. Am. Chem. Soc. 124 4564
[2] Tian J F, Xu Z C, Shen C M, Liu F, Xu N S and Gao H J 2010 Nanoscale 2 1375
[3] Wu C H, Juang Z Y and Hsieh C K 2014 Jpn. J. Appl. Phys. 53 11RE03
[4] Bai H, Zou H H, Chen G X, Yu J H, Nishimura K, Dai W and Jiang N 2014 Appl. Sur. Sci. 313 132
[5] Yang X Q, Hu Y, Zhang J L, Wang Y Q, Pei C M and Liu F 2014 Acta Phys. Sin. 63 048102 (in Chinese)
[6] Ding W Q, Calabri L, Chen X Q, Kohlhaas K M and Ruoff R S 2006 Composites Science and Technology 66 1112
[7] Zhang Y J, Ago H, Yumura M, Komatsu T, Ohshima S, Uchida K and Iijima S 2002 Chem. Commun. 2806
[8] Ciuparu D, Klie R F, Zhu Y M and Pfefferle L 2004 J. Phys. Chem. B 108 3967
[9] Liu F, Shen C M, Su Z J, Ding X L, Deng S Z, Chen J, Xu N S and Gao H J 2010 J. Mater. Chem. 20 2197
[10] Wang X J, Tian J F, Yang T Z, Bao L H, Hui C, Shen C M and Gao H J 2007 Adv. Mater. 19 4480
[11] Li C, Tian Y, Wang D K, Shi X Z, Hui C, Shen C M and Gao H J 2011 Chin. Phys. B 20 037903
[12] Wang Z K, Shimizu Y, Sasaki T, Kawaguchi K, Kimura K and Koshizaki N 2003 Chem. Phys. Lett. 368 663
[13] Kirihara K, Wang Z, Kawaguchi K, Shimizu Y, Sasaki T, Koshizaki N, Sogac K and Kimura K 2005 Appl. Phys. Lett. 86 212101
[14] Liu F, Tian J F, Bao L H, Yang T Z, Shen C M, Xu N S and Gao H J 2008 Adv. Mater. 20 2609
[15] Chang T S, Lu F W, Kunuku S, Leou K Y, Tai N H and Lin I 2015 RSC Adv. 5 2928
[16] Wang G J, Li Z C, Li M Y, Liao J C, Chen CH, Lv S S and Shi C Q 2015 Phys. Chem. Chem. Phys. 17 31822
[17] Zulkifli Z, Shinde S M, Suguira T S, Kalita G and Tanemura M 2015 Appl. Sur. Sci. 356 674
[18] Mao L F 2011 Carbon 49 2709
[19] Xiao Z M, She J C, Deng S Z, Tang Z K, Li Z B, Lu J M and Xu Ni S 2010 ACS Nano 4 6332
[20] Tian J F, Hui C, Bao L H, Li C, Tian Y, Ding H, Shen C M and Gao H J 2009 Appl. Phys. Lett. 94 083101
[21] Xu Z C, Shen C M, Hou Y L, Gao H J and Sun S 2009 Chem. Mater. 21 1778
[22] Rao C N R, Sood A K, Subrahmanyam K S and Govindaraj A 2008 Angew. Chem. Int. Ed. 48 7752
[23] Graf D, Molitor F, Ensslin K, Stampfer C, Jungen A, Hierold C and Wirtz L 2007 Nano Lett. 7 238
[24] Ye Z X, Ji X H and Zhang Q Y 2015 RSC Adv. 5 78502
[25] Liu Y F, Li C, Wang J S, Fan X Y, Yuan G, Xu S F, Xu M C, Zhang J and Zhao Y J 2015 Appl. Sur. Sci. 331 497
[26] Wu Q, Liu N, Zhang Y L, Qian W J, Wang X Z and Hu Z 2015 J. Mater. Chem. C 3 1113
[27] Fowler R H and Nordheim L W 1928 Proc. R. Soc. London, Ser. A 119 173
[28] Tian Y, Shen C M, Li C, Shi X Z, Huang Y and Gao H J 2011 Nano Research 4 780
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