Preparation of few-layer graphene-capped boron nanowires and their field emission properties

doi:10.1088/1674-1056/25/7/078101

Abstract

Large-area boron nanowire (BNW) films were fabricated on the Si(111) substrate by chemical vapor deposition (CVD). The average diameter of the BNWs is about 20 nm, with lengths of 5-10 μm. Then, graphene-capped boron nanowires (GC-BNWs) were obtained by microwave plasma chemical vapor deposition (MPCVD). Characterization by scanning electron microscopy indicates that few-layer graphene covers the surface of the boron nanowires. Field emission measurements of the BNWs and GC-BNW films show that the GC-BNW films have a lower turn-on electric field than the BNW films.

Keywords: boron nanowires graphene-capped boron nanowires field emission properties

Received: 07 March 2016
Revised: 16 March 2016
Accepted manuscript online:

PACS:	81.07.Gf	(Nanowires)
	81.05.ue	(Graphene)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	85.45.Fd	(Field emission displays (FEDs))

Fund:

Project supported by the National Basic Research Program of China (Grant No. 2013CB933604), the National Natural Science Foundation of China (Grant No. 51572290), and the Chinese Academy of Sciences (Grant Nos. 1731300500015 and XDB07030100).

Corresponding Authors: Cheng-Min Shen, Hong-Jun Gao
E-mail: cmshen@iphy.ac.cn;hjgao@iphy.ac.cn

Cite this article:

Yong-Xin Zhang(张永欣), Fei Liu(刘飞), Cheng-Min Shen(申承民), Tian-Zhong Yang(杨天中), Jun Li(李军), Shao-Zhi Deng(邓少芝), Ning-Sheng Xu(许宁生), Hong-Jun Gao(高鸿钧) Preparation of few-layer graphene-capped boron nanowires and their field emission properties 2016 Chin. Phys. B 25 078101

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Preparation of few-layer graphene-capped boron nanowires and their field emission properties

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