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Chin. Phys. B, 2015, Vol. 24(2): 027505    DOI: 10.1088/1674-1056/24/2/027505

Magnetization reversal process in Fe/Si (001) single-crystalline film investigated by planar Hall effect

Ye Jun (叶军)a b, He Wei (何为)b, Hu Bo (胡泊)b, Tang Jin (汤进)b, Zhang Yong-Sheng (张永圣)b, Zhang Xiang-Qun (张向群)b, Chen Zi-Yu (陈子瑜)a, Cheng Zhao-Hua (成昭华)b
a Department of Physics, Beihang University, Beijing 100191, China;
b State Key Laboratory of Magnetism and Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Abstract  A planar Hall effect (PHE) is introduced to investigate the magnetization reversal process in single-crystalline iron film grown on a Si (001) substrate. Owing to the domain structure of iron film and the characteristics of PHE, the magnetization switches sharply in an angular range of the external field for two steps of 90° domain wall displacement and one step of 180° domain wall displacement near the easy axis, respectively. However, the magnetization reversal process near the hard axis is completed by only one step of 90° domain wall displacement and then rotates coherently. The magnetization reversal process mechanism near the hard axis seems to be a combination of coherent rotation and domain wall displacement. Furthermore, the domain wall pinning energy and uniaxial magnetic anisotropy energy can also be derived from the PHE measurement.
Keywords:  magnetic thin film      domain wall displacement      planar Hall effect  
Received:  22 September 2014      Revised:  15 October 2014      Accepted manuscript online: 
PACS:  75.70.Ak (Magnetic properties of monolayers and thin films)  
  75.70.Kw (Domain structure (including magnetic bubbles and vortices))  
  75.30.Gw (Magnetic anisotropy)  
  75.47.-m (Magnetotransport phenomena; materials for magnetotransport)  
Fund: Project supported by the National Basic Research Program of China (Grant Nos. 2011CB921801 and 2012CB933102), the National Natural Science Foundation of China (Grant Nos. 11374350, 11034004, 11274361, 11274033, 11474015, and 61227902), and the Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20131102130005).
Corresponding Authors:  Chen Zi-Yu, Cheng Zhao-Hua     E-mail:;

Cite this article: 

Ye Jun (叶军), He Wei (何为), Hu Bo (胡泊), Tang Jin (汤进), Zhang Yong-Sheng (张永圣), Zhang Xiang-Qun (张向群), Chen Zi-Yu (陈子瑜), Cheng Zhao-Hua (成昭华) Magnetization reversal process in Fe/Si (001) single-crystalline film investigated by planar Hall effect 2015 Chin. Phys. B 24 027505

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